SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition

SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition

Research output: Contribution to conference › Paper

Abstract

In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respectto EPMA data for germanium and NRA data for hydrogen.

Original language	American English
Number of pages	7
State	Published - 1998
Event	National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998

Conference

Conference	National Center for Photovoltaics Program Review Meeting
City	Denver, Colorado
Period	8/09/98 → 11/09/98

NREL Publication Number

NREL/CP-520-25629

Access to Document

https://www.nrel.gov/docs/fy99osti/25629.pdf

Cite this

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title = "SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition",

abstract = "In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respectto EPMA data for germanium and NRA data for hydrogen.",

author = "NREL",

year = "1998",

language = "American English",

note = "National Center for Photovoltaics Program Review Meeting ; Conference date: 08-09-1998 Through 11-09-1998",

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TY - CONF

T1 - SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respectto EPMA data for germanium and NRA data for hydrogen.

AB - In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respectto EPMA data for germanium and NRA data for hydrogen.

M3 - Paper

T2 - National Center for Photovoltaics Program Review Meeting

Y2 - 8 September 1998 through 11 September 1998

ER -

SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition

Abstract

Conference

NREL Publication Number

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Cite this