SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon

    Research output: Contribution to conferencePaper

    Abstract

    Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process
    Original languageAmerican English
    Number of pages5
    StatePublished - 2005
    Event2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado
    Duration: 7 Nov 200510 Nov 2005

    Conference

    Conference2005 DOE Solar Energy Technologies Program Review Meeting
    CityDenver, Colorado
    Period7/11/0510/11/05

    Bibliographical note

    Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)

    NREL Publication Number

    • NREL/CP-520-38974

    Keywords

    • amorphous silicon
    • crystallization
    • NREL
    • photovoltaics (PV)
    • PV
    • solar

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