Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

Darius Kuciauskas; Pascal Jundt; James Sites

doi:10.1109/PVSC45281.2020.9300522

Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

Darius Kuciauskas, Pascal Jundt, James Sites

Chemistry and Nanoscience

Colorado State University

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.

Original language	American English
Pages	1408-1412
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300522 https://doi.org/10.1109/PVSC45281.2020.9300522
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-79352

Keywords

CdTe
modeling
p-n junction
thin film
TRPL

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title = "Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells",

abstract = "Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.",

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author = "Darius Kuciauskas and Pascal Jundt and James Sites",

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doi = "10.1109/PVSC45281.2020.9300522",

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T1 - Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

AU - Kuciauskas, Darius

AU - Jundt, Pascal

AU - Sites, James

PY - 2020/6/14

Y1 - 2020/6/14

N2 - Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.

AB - Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.

KW - CdTe

KW - modeling

KW - p-n junction

KW - thin film

KW - TRPL

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U2 - 10.1109/PVSC45281.2020.9300522

DO - 10.1109/PVSC45281.2020.9300522

M3 - Paper

AN - SCOPUS:85099565196

SP - 1408

EP - 1412

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

Abstract

Conference

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Keywords

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