Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers

A. Kanevce; J. V. Li; R. S. Crandall; M. R. Page; E. Iwaniczko

doi:10.1109/NUSOD.2010.5595659

Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers

A. Kanevce, J. V. Li, R. S. Crandall, M. R. Page, E. Iwaniczko

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.

Original language	American English
Pages	73-74
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2010.5595659 https://doi.org/10.1109/NUSOD.2010.5595659
State	Published - 2010
Event	10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 - Atlanta, GA, United States Duration: 6 Sep 2010 → 9 Sep 2010

Conference

Conference	10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
Country/Territory	United States
City	Atlanta, GA
Period	6/09/10 → 9/09/10

NREL Publication Number

NREL/CP-520-48315

Keywords

decay
simulation
solar cells

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Kanevce, A., Li, J. V., Crandall, R. S., Page, M. R., & Iwaniczko, E. (2010). Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers. 73-74. Paper presented at 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, Atlanta, GA, United States. https://doi.org/10.1109/NUSOD.2010.5595659, https://doi.org/10.1109/NUSOD.2010.5595659

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title = "Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers",

abstract = "This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.",

keywords = "decay, simulation, solar cells",

author = "A. Kanevce and Li, {J. V.} and Crandall, {R. S.} and Page, {M. R.} and E. Iwaniczko",

year = "2010",

doi = "10.1109/NUSOD.2010.5595659",

language = "American English",

pages = "73--74",

note = "10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 ; Conference date: 06-09-2010 Through 09-09-2010",

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Kanevce, A, Li, JV, Crandall, RS, Page, MR & Iwaniczko, E 2010, 'Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers', Paper presented at 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, Atlanta, GA, United States, 6/09/10 - 9/09/10 pp. 73-74. https://doi.org/10.1109/NUSOD.2010.5595659, https://doi.org/10.1109/NUSOD.2010.5595659

Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers. / Kanevce, A.; Li, J. V.; Crandall, R. S. et al.
2010. 73-74 Paper presented at 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, Atlanta, GA, United States.

Research output: Contribution to conference › Paper › peer-review

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T1 - Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers

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AU - Li, J. V.

AU - Crandall, R. S.

AU - Page, M. R.

AU - Iwaniczko, E.

PY - 2010

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AB - This work presents simulations of photo-excited minority carriers decay in HIT cells. The photo-carrier decay is analyzed as a function of light pulse duration, c-Si material quality and external parameters such as voltage bias and temperature. The simulation results can help interpret capacitance transient as well as photovoltage decay measurements.

KW - decay

KW - simulation

KW - solar cells

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T2 - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010

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Kanevce A, Li JV, Crandall RS, Page MR, Iwaniczko E. Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers. 2010. Paper presented at 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, Atlanta, GA, United States. doi: 10.1109/NUSOD.2010.5595659, 10.1109/NUSOD.2010.5595659

Simulations of Photo-Carrier Decay on Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells with N-Type Wafers

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Keywords

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