Single-Crystal CdTe Solar Cells with Voc Greater than 900 mV

Joel Duenow, David Albin, Darius Kuciauskas, Steven Johnston, Robert Reedy Jr., Wyatt Metzger, James Burst

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Abstract

We fabricated single-crystal CdTe photovoltaic devices in a heterojunction structure with an In-doped CdS window layer and ZnO/Al-doped ZnO front contact. By replacing the polycrystalline absorber layer of a CdTe solar cell with a single crystal, we were able to achieve open-circuit voltage (Voc) as high as 929 mV. Simulations and measurements indicate that increased minority-carrier lifetime and carrier concentration can explain this high V oc. Cu and Na both introduce transient effects in single-crystal CdTe similar to those observed in polycrystalline CdTe, suggesting that Group I dopants pose stability problems that are linked fundamentally to their defect chemistry in CdTe, regardless of the presence of grain boundaries.

Original languageAmerican English
Article number053903
Number of pages4
JournalApplied Physics Letters
Volume105
Issue number5
DOIs
StatePublished - 4 Aug 2014

NREL Publication Number

  • NREL/JA-5K00-62147

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