Slurry Painted CuInS2 and CuIn5S8 Layers: Preparation and Photoelectrochemical Characterization

Gary Hodes, Tina Engelhard, John A. Turner, David Cahen

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25 Scopus Citations


Layers of CuInS2, and CuIn5S8 were prepared by the slurry painting method from powders of the respective semiconductors, followed by annealing in Ar and then in H2S. The layers were characterized by X-ray powder diffraction, electron microprobe and surface analyses and, for their photovoltaic behaviour, by photoelectrochemical methods using a liquid polysulfide electrolyte as the junction-forming phase. For the CuInS2 layers, large spatial variations in the photocurrent were found using laser scanning techniques, and these were correlated roughly with the In:Cu ratio, which was found to be > 1 for areas of good photoactivity. Incorporation of the flux metal (Zn or Cd from ZnCl2 or CdCl2) into the layers was not found to be detrimental to the photoactivity, and possibly even beneficial. A steep increase in the dark reverse saturation current under small (< 0.1 V) reverse bias occurred, also on slurry painted In2S3 layers (which were also photoactive), and was connected with a layer of In2O3 or In2S3 at the surface of all films. Surface analyses (AES and XPS) showed that strong Cu depletion occurred at the surface of both CuInS2 and CuIn5S8. The surface of the former was found to be predominantly In2O3, while the latter was mainly In2S3, with possibly very localized surface oxide patches.

Original languageAmerican English
Pages (from-to)211-219
Number of pages9
JournalSolar Energy Materials
Issue number3
StatePublished - 1985
Externally publishedYes

Bibliographical note

Work performed by Department of Materials Research and Structural Chemistry, Weizmann Institute of Science, Rehovot, Israel

NREL Publication Number

  • ACNR/JA-236-6678


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