Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD

D. L. Williamson; D. W.M. Marr; B. P. Nelson; E. Iwaniczko; J. Yang; B. Yan; S. Guha

doi:10.1557/proc-609-a16.2

Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD

D. L. Williamson, D. W.M. Marr, B. P. Nelson, E. Iwaniczko, J. Yang, B. Yan, S. Guha

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

The heterogeneity of a-Si:H and a-Si:D films has been probed on the nano-scale by small-angle neutron scattering (SANS). Films were deposited by two techniques, plasma-enhanced chemical-vapour deposition (PECVD) and hot-wire chemical-vapour deposition (HWCVD) using conditions that yield high-quality films and devices. Four samples were examined in a light-soaked state (AM1.5, 300 h) and then re-examined after annealing (190°C, 1 h) in-situ to look for any change in SANS associated with the Staebler-Wronski effect. No changes were observed in the SANS intensity to a precision that could have readily detected the 25% change reported in 1985 (Chenevas-Paule et al). Significant differences are observed in hydrogenated and deuterated films, as well as in the PECVD versus the HWCVD materials.

Original language	American English
Pages	A1621-A1626
DOIs	https://doi.org/10.1557/proc-609-a16.2
State	Published - 2000
Event	Amorphous and Heterogeneous Silicon Thin Films 2000: Materials Research Society Symposium - San Francisco, California Duration: 24 Apr 2000 → 28 Apr 2000

Conference

Conference	Amorphous and Heterogeneous Silicon Thin Films 2000: Materials Research Society Symposium
City	San Francisco, California
Period	24/04/00 → 28/04/00

NREL Publication Number

NREL/CP-520-30428

Access to Document

10.1557/proc-609-a16.2

Cite this

Williamson, D. L., Marr, D. W. M., Nelson, B. P., Iwaniczko, E., Yang, J., Yan, B., & Guha, S. (2000). Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD. A1621-A1626. Paper presented at Amorphous and Heterogeneous Silicon Thin Films 2000: Materials Research Society Symposium, San Francisco, California. https://doi.org/10.1557/proc-609-a16.2

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abstract = "The heterogeneity of a-Si:H and a-Si:D films has been probed on the nano-scale by small-angle neutron scattering (SANS). Films were deposited by two techniques, plasma-enhanced chemical-vapour deposition (PECVD) and hot-wire chemical-vapour deposition (HWCVD) using conditions that yield high-quality films and devices. Four samples were examined in a light-soaked state (AM1.5, 300 h) and then re-examined after annealing (190°C, 1 h) in-situ to look for any change in SANS associated with the Staebler-Wronski effect. No changes were observed in the SANS intensity to a precision that could have readily detected the 25% change reported in 1985 (Chenevas-Paule et al). Significant differences are observed in hydrogenated and deuterated films, as well as in the PECVD versus the HWCVD materials.",

author = "Williamson, {D. L.} and Marr, {D. W.M.} and Nelson, {B. P.} and E. Iwaniczko and J. Yang and B. Yan and S. Guha",

year = "2000",

doi = "10.1557/proc-609-a16.2",

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note = "Amorphous and Heterogeneous Silicon Thin Films 2000: Materials Research Society Symposium ; Conference date: 24-04-2000 Through 28-04-2000",

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Williamson, DL, Marr, DWM, Nelson, BP, Iwaniczko, E, Yang, J, Yan, B & Guha, S 2000, 'Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD', Paper presented at Amorphous and Heterogeneous Silicon Thin Films 2000: Materials Research Society Symposium, San Francisco, California, 24/04/00 - 28/04/00 pp. A1621-A1626. https://doi.org/10.1557/proc-609-a16.2

Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD. / Williamson, D. L.; Marr, D. W.M.; Nelson, B. P. et al.
2000. A1621-A1626 Paper presented at Amorphous and Heterogeneous Silicon Thin Films 2000: Materials Research Society Symposium, San Francisco, California.

Research output: Contribution to conference › Paper › peer-review

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T1 - Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD

AU - Williamson, D. L.

AU - Marr, D. W.M.

AU - Nelson, B. P.

AU - Iwaniczko, E.

AU - Yang, J.

AU - Yan, B.

AU - Guha, S.

PY - 2000

Y1 - 2000

N2 - The heterogeneity of a-Si:H and a-Si:D films has been probed on the nano-scale by small-angle neutron scattering (SANS). Films were deposited by two techniques, plasma-enhanced chemical-vapour deposition (PECVD) and hot-wire chemical-vapour deposition (HWCVD) using conditions that yield high-quality films and devices. Four samples were examined in a light-soaked state (AM1.5, 300 h) and then re-examined after annealing (190°C, 1 h) in-situ to look for any change in SANS associated with the Staebler-Wronski effect. No changes were observed in the SANS intensity to a precision that could have readily detected the 25% change reported in 1985 (Chenevas-Paule et al). Significant differences are observed in hydrogenated and deuterated films, as well as in the PECVD versus the HWCVD materials.

AB - The heterogeneity of a-Si:H and a-Si:D films has been probed on the nano-scale by small-angle neutron scattering (SANS). Films were deposited by two techniques, plasma-enhanced chemical-vapour deposition (PECVD) and hot-wire chemical-vapour deposition (HWCVD) using conditions that yield high-quality films and devices. Four samples were examined in a light-soaked state (AM1.5, 300 h) and then re-examined after annealing (190°C, 1 h) in-situ to look for any change in SANS associated with the Staebler-Wronski effect. No changes were observed in the SANS intensity to a precision that could have readily detected the 25% change reported in 1985 (Chenevas-Paule et al). Significant differences are observed in hydrogenated and deuterated films, as well as in the PECVD versus the HWCVD materials.

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ER -

Small-Angle Neutron Scattering from Device-Quality a-Si:H and a-Si:D Prepared by PECVD and HWCVD

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