Abstract
Several a-Si:H and a-Si:D films prepared by hot-wire chemical vapor deposition have been examined by small-angle neutron scattering (SANS) to search for H non-uniformity in this material. The SANS measurements were supplemented by small-angle X-ray scattering measurements. The differences in H/D detection sensitivity of these two techniques allow distinction of the scattering mechanisms. Two- or three-phase models are used to interpret the results quantitatively. Significant H non-uniformity, as well as a small fraction of microvoids, was found in the best-quality material. Samples grown with higher deposition rates or lower substrate temperatures have much larger void fractions. The size scale of the heterogeneity spans a range from 2 nm to more than 50 nm, with the largest features assigned to surface roughness.
| Original language | American English |
|---|---|
| Pages (from-to) | 192-196 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 430 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - 2003 |
| Event | Proceedings of the Second International Conference on CAT-CVD - Denver, CO, United States Duration: 10 Sep 2002 → 13 Sep 2002 |
NREL Publication Number
- NREL/JA-520-35029
Keywords
- Amorphous materials
- Hot-wire deposition
- Microstructure
- Small-angle neutron scattering