Small-Angle X-Ray Scattering Studies of Microvoids in Amorphous-Silicon-Based Semiconductors: Annual Subcontract Report, 1 February 1992 - 31 January 1993

    Research output: NRELTechnical Report

    Abstract

    Our general objectives are to provide new details of the microstructure for the size scale from about 1 to 30 nm in high-quality a-Si:H and related alloys prepared by current state-of-the-art deposition methods as well as by new and emerging deposition technologies and thereby help determine the role of microvoids and other density fluctuations in controlling the opto-electronic properties.
    Original languageAmerican English
    Number of pages50
    DOIs
    StatePublished - 1994

    Bibliographical note

    Work performed by Colorado School of Mines, Golden, Colorado

    NREL Publication Number

    • NREL/TP-451-6395

    Keywords

    • deposition
    • optoelectronic properties
    • thin films

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