Abstract
Our general objectives are to provide new details of the microstructure for the size scale from about 1 to 30 nm in high-quality a-Si:H and related alloys prepared by current state-of-the-art deposition methods as well as by new and emerging deposition technologies and thereby help determine the role of microvoids and other density fluctuations in controlling the opto-electronic properties.
Original language | American English |
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Number of pages | 50 |
DOIs | |
State | Published - 1994 |
Bibliographical note
Work performed by Colorado School of Mines, Golden, ColoradoNREL Publication Number
- NREL/TP-451-6395
Keywords
- deposition
- optoelectronic properties
- thin films