SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices

L. C. Infante-Ortega; Xiaolei Liu; Luksa Kujovic; Mustafa Togay; Luke Jones; Ali Abbas; Kieran Curson; R. C. Greenhalgh; Kurt Barth; Jake Bowers; John Walls; Ochai Oklobia; Stuart Irvine; Eric Colegrove; Brian Good; Matt Reese

doi:10.1109/PVSC48320.2023.10359712

SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices

L. C. Infante-Ortega, Xiaolei Liu, Luksa Kujovic, Mustafa Togay, Luke Jones, Ali Abbas, Kieran Curson, R. C. Greenhalgh, Kurt Barth, Jake Bowers, John Walls, Ochai Oklobia, Stuart Irvine, Eric Colegrove, Brian Good, Matt Reese

Materials Science

Research output: Contribution to conference › Paper

2 Scopus Citations

Abstract

SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The buffer layers were then incorporated into Cu-doped CdSeTe/CdTe devices using a range of CdCl 2 activation treatments and CuCl2 annealing temperatures to determine the effects of buffer layer thickness on device performance. Results show that all devices fabricated with thinner buffer layers resulted in much better J - V characteristics than their thicker counterparts. This was mainly due to a reduced open-circuit voltage (Voc) when using thicker buffer layers. The best device produced a conversion efficiency of 16.59%, fill factor of 71.62%, Jsc of 28.44 mA/cm 2 and Voc of 814.23 mV.

Original language	American English
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC48320.2023.10359712
State	Published - 2023
Event	2023 IEEE 50th Photovoltaic Specialists Conference (PVSC) - San Juan, Puerto Rico Duration: 11 Jun 2023 → 16 Jun 2023

Conference

Conference	2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)
City	San Juan, Puerto Rico
Period	11/06/23 → 16/06/23

NREL Publication Number

NREL/CP-5K00-88844

Keywords

buffer layers
glass
magnetic devices
performance evaluation
photovoltaic cells
radio frequency
voltage

Access to Document

10.1109/PVSC48320.2023.10359712

Cite this

Infante-Ortega, L. C., Liu, X., Kujovic, L., Togay, M., Jones, L., Abbas, A., Curson, K., Greenhalgh, R. C., Barth, K., Bowers, J., Walls, J., Oklobia, O., Irvine, S., Colegrove, E., Good, B., & Reese, M. (2023). SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices. Paper presented at 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), San Juan, Puerto Rico. https://doi.org/10.1109/PVSC48320.2023.10359712

@conference{8c3ed84917ed4d7fbe1f20af098b373b,

title = "SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices",

abstract = "SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The buffer layers were then incorporated into Cu-doped CdSeTe/CdTe devices using a range of CdCl 2 activation treatments and CuCl2 annealing temperatures to determine the effects of buffer layer thickness on device performance. Results show that all devices fabricated with thinner buffer layers resulted in much better J - V characteristics than their thicker counterparts. This was mainly due to a reduced open-circuit voltage (Voc) when using thicker buffer layers. The best device produced a conversion efficiency of 16.59%, fill factor of 71.62%, Jsc of 28.44 mA/cm 2 and Voc of 814.23 mV.",

keywords = "buffer layers, glass, magnetic devices, performance evaluation, photovoltaic cells, radio frequency, voltage",

author = "Infante-Ortega, {L. C.} and Xiaolei Liu and Luksa Kujovic and Mustafa Togay and Luke Jones and Ali Abbas and Kieran Curson and Greenhalgh, {R. C.} and Kurt Barth and Jake Bowers and John Walls and Ochai Oklobia and Stuart Irvine and Eric Colegrove and Brian Good and Matt Reese",

year = "2023",

doi = "10.1109/PVSC48320.2023.10359712",

language = "American English",

note = "2023 IEEE 50th Photovoltaic Specialists Conference (PVSC) ; Conference date: 11-06-2023 Through 16-06-2023",

}

Infante-Ortega, LC, Liu, X, Kujovic, L, Togay, M, Jones, L, Abbas, A, Curson, K, Greenhalgh, RC, Barth, K, Bowers, J, Walls, J, Oklobia, O, Irvine, S, Colegrove, E, Good, B & Reese, M 2023, 'SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices', Paper presented at 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), San Juan, Puerto Rico, 11/06/23 - 16/06/23. https://doi.org/10.1109/PVSC48320.2023.10359712

TY - CONF

T1 - SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices

AU - Infante-Ortega, L. C.

AU - Liu, Xiaolei

AU - Kujovic, Luksa

AU - Togay, Mustafa

AU - Jones, Luke

AU - Abbas, Ali

AU - Curson, Kieran

AU - Greenhalgh, R. C.

AU - Barth, Kurt

AU - Bowers, Jake

AU - Walls, John

AU - Oklobia, Ochai

AU - Irvine, Stuart

AU - Colegrove, Eric

AU - Good, Brian

AU - Reese, Matt

PY - 2023

Y1 - 2023

N2 - SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The buffer layers were then incorporated into Cu-doped CdSeTe/CdTe devices using a range of CdCl 2 activation treatments and CuCl2 annealing temperatures to determine the effects of buffer layer thickness on device performance. Results show that all devices fabricated with thinner buffer layers resulted in much better J - V characteristics than their thicker counterparts. This was mainly due to a reduced open-circuit voltage (Voc) when using thicker buffer layers. The best device produced a conversion efficiency of 16.59%, fill factor of 71.62%, Jsc of 28.44 mA/cm 2 and Voc of 814.23 mV.

AB - SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The buffer layers were then incorporated into Cu-doped CdSeTe/CdTe devices using a range of CdCl 2 activation treatments and CuCl2 annealing temperatures to determine the effects of buffer layer thickness on device performance. Results show that all devices fabricated with thinner buffer layers resulted in much better J - V characteristics than their thicker counterparts. This was mainly due to a reduced open-circuit voltage (Voc) when using thicker buffer layers. The best device produced a conversion efficiency of 16.59%, fill factor of 71.62%, Jsc of 28.44 mA/cm 2 and Voc of 814.23 mV.

KW - buffer layers

KW - glass

KW - magnetic devices

KW - performance evaluation

KW - photovoltaic cells

KW - radio frequency

KW - voltage

U2 - 10.1109/PVSC48320.2023.10359712

DO - 10.1109/PVSC48320.2023.10359712

M3 - Paper

T2 - 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)

Y2 - 11 June 2023 through 16 June 2023

ER -

SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices

Abstract

Conference

NREL Publication Number

Keywords

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