SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film

Sakiko Kawanishi, Issei Suzuki, Sage Bauers, Andriy Zakutayev, Hiroyuki Shibata, Hiroshi Yanagi, Takahisa Omata

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32 Scopus Citations


Herein, a pn homojunction SnS solar cell is fabricated for the first time by the deposition of p-type SnS polycrystalline thin films on the recently reported large n-type SnS single crystals. The p-type thin films consist of columnar grains that grow along the <100> direction, which is the same orientation as the n-type single crystal. In addition, the interface of the pn homojunctions is void-free and compositionally sharp. The SnS homojunction solar cell achieves an open-circuit voltage (VOC) of 360 mV, which is as large as the highest VOC of previously reported SnS-based heterojunction solar cells. The built-in potential of the homojunction cell is 0.92 eV, which is close to the bandgap energy of SnS (≈1.1 eV), and larger than reported for heterojunctions (≈0.7 eV). The resulting 1.4% conversion efficiency (η) of the homojunction solar cell is smaller than the record 4–5% in heterojunctions, mainly due to the low short-circuit current density (JSC) of 7.5 mA cm−2. Once the device structure of the homojunction cell is optimized to efficiently collect the photogenerated carriers and achieve a comparable JSC as the conventional heterojunction cells (≈25 mA cm−2), high η exceeding 4–5% will be realized with improving the VOC.

Original languageAmerican English
Article number2000708
Number of pages7
JournalSolar RRL
Issue number4
StatePublished - 2021

Bibliographical note

Publisher Copyright:
© 2021 Wiley-VCH GmbH

NREL Publication Number

  • NREL/JA-5K00-78443


  • pn homojunctions
  • solar cells
  • tin (II) sulfide


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