Sol-Gel Derived Thin-Film Semiconductor Hydrogen Gas Sensor

A. Z. Adamyan, Z. N. Adamyan, V. M. Aroutiounian, A. H. Arakelyan, K. J. Touryan, J. A. Turner

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86 Scopus Citations

Abstract

We present the results of investigations of thin-film hydrogen sensors that show high sensitivity at low operating temperatures. These hydrogen sensors are manufactured using the sol-gel technique which ensures high temperature stability of nanocrystalline grains in the SnO2 films. It was established that the highest sensitivity of the sensors occurred at 100 - 130 {ring operator} C. The hydrogen sensitivity depends on the hydrogen concentration linearly starting at 50 ppm, and reaches 104 at 5000 ppm. The response time was measured at 1-2 s and the times were less than 10 s. We show that compared to constant power supply, pulse heating of the sensor improves the stability of the sensor, reduces the sensitivity to humidity, and reduces performance drift. We consider the effects of the material substrates, technology of the comb-like electrodes, and catalyst preparations. Various possibilities of reducing CO gas cross sensitivity are also presented.

Original languageAmerican English
Pages (from-to)4101-4108
Number of pages8
JournalInternational Journal of Hydrogen Energy
Volume32
Issue number16
DOIs
StatePublished - 2007

NREL Publication Number

  • NREL/JA-560-41348

Keywords

  • Gas sensitivity
  • Hydrogen sensor
  • Nanocrystallites
  • Thin film

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