Abstract
Single or multiple-junction solar cells combining hydrogenated amorphous silicon (a-Si;H) and/or microcrystalline silicon thin films with a single-crystalline silicon or polycrystalline silicon (Poly-Si) substrate have potential for high efficiency and long-term stability. The processing temperatures for such cells need not exceed 250 °C and, except for the Si substrate, only chemical and physical vapor depositions are used for cell fabrication. We are studying two cell structures: single-junction with the structure of p-type μc-Si/p-type a-Si:H/n-type c-Si and two-junction with the structure of n-i-p a iX:H/n+-p c-Si.
Original language | American English |
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Pages | 281-286 |
Number of pages | 6 |
DOIs | |
State | Published - 1993 |
Event | Proceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA Duration: 10 May 1993 → 14 May 1993 |
Conference
Conference | Proceedings of the 23rd IEEE Photovoltaic Specialists Conference |
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City | Louisville, KY, USA |
Period | 10/05/93 → 14/05/93 |
NREL Publication Number
- NREL/CP-451-5585