Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films

David L. Young; Paul Stradins; Eugene Iwaniczko; Bobby To; Bob Reedy; Yanfa Yan; Howard M. Branz; John Lohr; Manuel Alvarez; John Booske; Amy Marconnet; Qi Wang

doi:10.1557/proc-862-a10.5

Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films

David L. Young, Paul Stradins, Eugene Iwaniczko, Bobby To, Bob Reedy, Yanfa Yan, Howard M. Branz, John Lohr, Manuel Alvarez, John Booske, Amy Marconnet, Qi Wang

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

10 Scopus Citations

Abstract

We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 - 2 μm thick, and deposited by high deposition rate (10-100 Å/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100°C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).

Original language	American English
Pages	233-238
Number of pages	6
DOIs	https://doi.org/10.1557/proc-862-a10.5
State	Published - 2005
Event	Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium - San Francisco, California Duration: 28 Mar 2005 → 1 Apr 2005

Conference

Conference	Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium
City	San Francisco, California
Period	28/03/05 → 1/04/05

NREL Publication Number

NREL/CP-520-37833

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10.1557/proc-862-a10.5

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Young, D. L., Stradins, P., Iwaniczko, E., To, B., Reedy, B., Yan, Y., Branz, H. M., Lohr, J., Alvarez, M., Booske, J., Marconnet, A., & Wang, Q. (2005). Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films. 233-238. Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium, San Francisco, California. https://doi.org/10.1557/proc-862-a10.5

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title = "Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films",

abstract = "We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 - 2 μm thick, and deposited by high deposition rate (10-100 {\AA}/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100°C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).",

author = "Young, {David L.} and Paul Stradins and Eugene Iwaniczko and Bobby To and Bob Reedy and Yanfa Yan and Branz, {Howard M.} and John Lohr and Manuel Alvarez and John Booske and Amy Marconnet and Qi Wang",

year = "2005",

doi = "10.1557/proc-862-a10.5",

language = "American English",

pages = "233--238",

note = "Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium ; Conference date: 28-03-2005 Through 01-04-2005",

}

Young, DL , Stradins, P, Iwaniczko, E, To, B, Reedy, B, Yan, Y, Branz, HM, Lohr, J, Alvarez, M, Booske, J, Marconnet, A & Wang, Q 2005, 'Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films', Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium, San Francisco, California, 28/03/05 - 1/04/05 pp. 233-238. https://doi.org/10.1557/proc-862-a10.5

TY - CONF

T1 - Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films

AU - Young, David L.

AU - Stradins, Paul

AU - Iwaniczko, Eugene

AU - To, Bobby

AU - Reedy, Bob

AU - Yan, Yanfa

AU - Branz, Howard M.

AU - Lohr, John

AU - Alvarez, Manuel

AU - Booske, John

AU - Marconnet, Amy

AU - Wang, Qi

PY - 2005

Y1 - 2005

N2 - We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 - 2 μm thick, and deposited by high deposition rate (10-100 Å/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100°C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).

AB - We measure times for complete solid phase crystallization (SPC) of hydrogenated amorphous silicon (a-Si:H) thin films that vary eight orders of magnitude, from a few ms to a few days. The time-to-crystallization activation energy is consistent with literature values of approximately 3.4 eV but the prefactor is markedly different for hot-wire chemical vapor deposition (HWCVD) films than for plasma-enhanced (PE) CVD films. The crystallized films were 0.3 - 2 μm thick, and deposited by high deposition rate (10-100 Å/s) HWCVD or standard PECVD onto glass substrates. We annealed these a-Si:H films over a wide temperature range (500 to 1100°C) using techniques including simple hot-plates and tube furnaces, rapid thermal annealing by a tungsten-halogen lamp, and microwave electromagnetic heating at 2.45 GHz (magnetron) and 110 GHz (gyrotron).

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DO - 10.1557/proc-862-a10.5

M3 - Paper

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T2 - Amorphous and Nanocrystalline Silicon Science and Technology 2005: Materials Research Society Symposium

Y2 - 28 March 2005 through 1 April 2005

ER -

Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films

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