Solid State Theory of Photovoltaic Materials: Nanoscale Grain Boundaries and Doping CIGS

Solid State Theory of Photovoltaic Materials: Nanoscale Grain Boundaries and Doping CIGS

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

We use modern first-principles electronic structure theory to investigate (1) why are grain boundaries in chalcopyrites passive; (2) can chalcopyrites be doped by transition metals, and; (3) can hot electrons and carrier multiplication be efficient in quantum-dot solar cells.

Original language	American English
Number of pages	5
State	Published - 2005
Event	2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 25 Oct 2004 → 28 Oct 2004

Conference

Conference	2004 DOE Solar Energy Technologies Program Review Meeting
City	Denver, Colorado
Period	25/10/04 → 28/10/04

Bibliographical note

Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)

NREL Publication Number

NREL/CP-590-37162

Keywords

carrier multiplication
chalcopyrites
electronic structure theory
grain boundary (GBS)
PV
quantum dots (QD)
solar cells
transition metals

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://www.nrel.gov/docs/fy05osti/37162.pdf

Cite this

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title = "Solid State Theory of Photovoltaic Materials: Nanoscale Grain Boundaries and Doping CIGS",

abstract = "We use modern first-principles electronic structure theory to investigate (1) why are grain boundaries in chalcopyrites passive; (2) can chalcopyrites be doped by transition metals, and; (3) can hot electrons and carrier multiplication be efficient in quantum-dot solar cells.",

keywords = "carrier multiplication, chalcopyrites, electronic structure theory, grain boundary (GBS), PV, quantum dots (QD), solar cells, transition metals",

author = "NREL",

note = "Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140); 2004 DOE Solar Energy Technologies Program Review Meeting ; Conference date: 25-10-2004 Through 28-10-2004",

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language = "American English",

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N1 - Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)

PY - 2005

Y1 - 2005

N2 - We use modern first-principles electronic structure theory to investigate (1) why are grain boundaries in chalcopyrites passive; (2) can chalcopyrites be doped by transition metals, and; (3) can hot electrons and carrier multiplication be efficient in quantum-dot solar cells.

AB - We use modern first-principles electronic structure theory to investigate (1) why are grain boundaries in chalcopyrites passive; (2) can chalcopyrites be doped by transition metals, and; (3) can hot electrons and carrier multiplication be efficient in quantum-dot solar cells.

KW - carrier multiplication

KW - chalcopyrites

KW - electronic structure theory

KW - grain boundary (GBS)

KW - PV

KW - quantum dots (QD)

KW - solar cells

KW - transition metals

M3 - Paper

T2 - 2004 DOE Solar Energy Technologies Program Review Meeting

Y2 - 25 October 2004 through 28 October 2004

ER -

Solid State Theory of Photovoltaic Materials: Nanoscale Grain Boundaries and Doping CIGS

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

Fingerprint

Cite this