Abstract
We investigate the structure and energetics of native and oxygen-related defects in MgB2. First-principles total-energy calculations reveal that the nonstoichiometry in MgB2 can be very small. Oxygen impurities have high solubility in MgB2 at O-rich growth conditions. However, the presence of excess Mg during the growth can dramatically reduce oxygen incorporation by forming MgO precipitates. Oxygen impurities are found to exist in atomic form in MgB2. Interstitial oxygen atoms are very mobile, with an activation energy of 1.3 eV, indicating that they can be annealed out ex situ in Mg vapor.
Original language | American English |
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Article number | Article No. 212503 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 67 |
Issue number | 21 |
DOIs | |
State | Published - 9 Jun 2003 |
NREL Publication Number
- NREL/JA-520-33152