Solution Grown Polysilicon for Photovoltaic Devices

R. L. Wallace, W. A. Anderson, K. M. Jones, R. Ahrenkiel

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations

Abstract

A process has been developed for the low temperature deposition of polysilicon films from a thin layer of Si-metal melt, onto SiO2 or glass substrates. Substrate temperatures ranged from 450° to 650°C. The wetting behavior of the liquid layer onto the substrate has been found very important. Morphological results are very good if a Ti wetting layer is used; films with grain size of up to 25 μm are deposited. These films show highly preferred (111) orientation, good hole mobility (approx. 100 cm2V-1s-1), but very poor photoconductivity. Not using a wetting layer results in a smaller grain size, poorer electron mobility (up to 60 cm2V-1s-1), but improved photoconductivity. Trends are found linking electrical properties to deposition temperature and thickness of solvent layer used. Some improvement is found by ECR plasma hydrogenation.

Original languageAmerican English
Pages697-700
Number of pages4
DOIs
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA
Duration: 13 May 199617 May 1996

Conference

ConferenceProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference
CityWashington, DC, USA
Period13/05/9617/05/96

NREL Publication Number

  • NREL/CP-22392

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