Solution Grown Polysilicon for Photovoltaic Devices

R. L. Wallace, W. A. Anderson, K. M. Jones, R. Ahrenkiel

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


A process has been developed for the low temperature deposition of polysilicon films from a thin layer of Si-metal melt, onto SiO2 or glass substrates. Substrate temperatures ranged from 450° to 650°C. The wetting behavior of the liquid layer onto the substrate has been found very important. Morphological results are very good if a Ti wetting layer is used; films with grain size of up to 25 μm are deposited. These films show highly preferred (111) orientation, good hole mobility (approx. 100 cm2V-1s-1), but very poor photoconductivity. Not using a wetting layer results in a smaller grain size, poorer electron mobility (up to 60 cm2V-1s-1), but improved photoconductivity. Trends are found linking electrical properties to deposition temperature and thickness of solvent layer used. Some improvement is found by ECR plasma hydrogenation.

Original languageAmerican English
Number of pages4
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA
Duration: 13 May 199617 May 1996


ConferenceProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference
CityWashington, DC, USA

NREL Publication Number

  • NREL/CP-22392


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