Solution Grown Polysilicon for Photovoltaic Devices

R. L. Wallace; W. A. Anderson; K. M. Jones; R. Ahrenkiel

doi:10.1109/pvsc.1996.564225

Solution Grown Polysilicon for Photovoltaic Devices

R. L. Wallace, W. A. Anderson, K. M. Jones, R. Ahrenkiel

Materials Science

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

A process has been developed for the low temperature deposition of polysilicon films from a thin layer of Si-metal melt, onto SiO₂ or glass substrates. Substrate temperatures ranged from 450° to 650°C. The wetting behavior of the liquid layer onto the substrate has been found very important. Morphological results are very good if a Ti wetting layer is used; films with grain size of up to 25 μm are deposited. These films show highly preferred (111) orientation, good hole mobility (approx. 100 cm²V^-1s^-1), but very poor photoconductivity. Not using a wetting layer results in a smaller grain size, poorer electron mobility (up to 60 cm²V^-1s^-1), but improved photoconductivity. Trends are found linking electrical properties to deposition temperature and thickness of solvent layer used. Some improvement is found by ECR plasma hydrogenation.

Original language	American English
Pages	697-700
Number of pages	4
DOIs	https://doi.org/10.1109/pvsc.1996.564225 https://doi.org/10.1109/PVSC.1996.564225
State	Published - 1996
Event	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference
City	Washington, DC, USA
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22392

Access to Document

Cite this

@conference{c6ff1cf514ab42baa4423a7289fec0ca,

title = "Solution Grown Polysilicon for Photovoltaic Devices",

abstract = "A process has been developed for the low temperature deposition of polysilicon films from a thin layer of Si-metal melt, onto SiO2 or glass substrates. Substrate temperatures ranged from 450° to 650°C. The wetting behavior of the liquid layer onto the substrate has been found very important. Morphological results are very good if a Ti wetting layer is used; films with grain size of up to 25 μm are deposited. These films show highly preferred (111) orientation, good hole mobility (approx. 100 cm2V-1s-1), but very poor photoconductivity. Not using a wetting layer results in a smaller grain size, poorer electron mobility (up to 60 cm2V-1s-1), but improved photoconductivity. Trends are found linking electrical properties to deposition temperature and thickness of solvent layer used. Some improvement is found by ECR plasma hydrogenation.",

author = "Wallace, \{R. L.\} and Anderson, \{W. A.\} and Jones, \{K. M.\} and R. Ahrenkiel",

year = "1996",

doi = "10.1109/pvsc.1996.564225",

language = "American English",

pages = "697--700",

note = "Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

TY - CONF

T1 - Solution Grown Polysilicon for Photovoltaic Devices

AU - Wallace, R. L.

AU - Anderson, W. A.

AU - Jones, K. M.

AU - Ahrenkiel, R.

PY - 1996

Y1 - 1996

N2 - A process has been developed for the low temperature deposition of polysilicon films from a thin layer of Si-metal melt, onto SiO2 or glass substrates. Substrate temperatures ranged from 450° to 650°C. The wetting behavior of the liquid layer onto the substrate has been found very important. Morphological results are very good if a Ti wetting layer is used; films with grain size of up to 25 μm are deposited. These films show highly preferred (111) orientation, good hole mobility (approx. 100 cm2V-1s-1), but very poor photoconductivity. Not using a wetting layer results in a smaller grain size, poorer electron mobility (up to 60 cm2V-1s-1), but improved photoconductivity. Trends are found linking electrical properties to deposition temperature and thickness of solvent layer used. Some improvement is found by ECR plasma hydrogenation.

AB - A process has been developed for the low temperature deposition of polysilicon films from a thin layer of Si-metal melt, onto SiO2 or glass substrates. Substrate temperatures ranged from 450° to 650°C. The wetting behavior of the liquid layer onto the substrate has been found very important. Morphological results are very good if a Ti wetting layer is used; films with grain size of up to 25 μm are deposited. These films show highly preferred (111) orientation, good hole mobility (approx. 100 cm2V-1s-1), but very poor photoconductivity. Not using a wetting layer results in a smaller grain size, poorer electron mobility (up to 60 cm2V-1s-1), but improved photoconductivity. Trends are found linking electrical properties to deposition temperature and thickness of solvent layer used. Some improvement is found by ECR plasma hydrogenation.

UR - https://www.scopus.com/pages/publications/0030408726

U2 - 10.1109/pvsc.1996.564225

DO - 10.1109/pvsc.1996.564225

M3 - Paper

AN - SCOPUS:0030408726

SP - 697

EP - 700

T2 - Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Solution Grown Polysilicon for Photovoltaic Devices

Abstract

Conference

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this