Some Electrical Properties of Ion-Implanted Urania--Part II: Preprint

    Research output: Contribution to conferencePaper


    As part of the U.S. Department of Energy's effort to evaluate the use of UO2 as a material for photovoltaic (e.g., solar cell) applications, single-crystal UO2 samples were characterized as to their electrical and electro-optical properties. Samples of UO2 were ion implanted with boron and sulfur dopants, as well as with boron and sulfur co-dopants, at the Ion Beam Materials Laboratory facilityat Los Alamos National Laboratory. Activation energies for electrical conduction were measured to be from 0.13 to 0.26 eV, when temperatures varied from 180 to 450 K. Dark current was measured followed by light current under 1-sun illumination. In general, the dark and light currents were about an order of magnitude greater than those reported earlier for polycrystalline UO2. Optical andinfrared absorption and transmission data were also obtained and are reported. Transmission data on the single-crystal samples revealed a complex structure that made it difficult to resolve a single optical bandgap.
    Original languageAmerican English
    Number of pages14
    StatePublished - 2003
    EventSociety for the Advancement of Material and Process Engineering (SAMPE) 2003 Symposium - Long Beach, California
    Duration: 11 May 200315 May 2003


    ConferenceSociety for the Advancement of Material and Process Engineering (SAMPE) 2003 Symposium
    CityLong Beach, California

    NREL Publication Number

    • NREL/CP-520-33441


    • activation energy
    • dark current
    • electrical and electro-optical properties
    • ion-implantation
    • light-current
    • PV
    • semiconductors
    • transport properties
    • uranium dioxide (UO2)


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