Abstract
As part of the U.S. Department of Energy's effort to evaluate the use of UO2 as a material for photovoltaic (e.g., solar cell) applications, single-crystal UO2 samples were characterized as to their electrical and electro-optical properties. Samples of UO2 were ion implanted with boron and sulfur dopants, as well as with boron and sulfur co-dopants, at the Ion Beam Materials Laboratory facilityat Los Alamos National Laboratory. Activation energies for electrical conduction were measured to be from 0.13 to 0.26 eV, when temperatures varied from 180 to 450 K. Dark current was measured followed by light current under 1-sun illumination. In general, the dark and light currents were about an order of magnitude greater than those reported earlier for polycrystalline UO2. Optical andinfrared absorption and transmission data were also obtained and are reported. Transmission data on the single-crystal samples revealed a complex structure that made it difficult to resolve a single optical bandgap.
Original language | American English |
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Number of pages | 14 |
State | Published - 2003 |
Event | Society for the Advancement of Material and Process Engineering (SAMPE) 2003 Symposium - Long Beach, California Duration: 11 May 2003 → 15 May 2003 |
Conference
Conference | Society for the Advancement of Material and Process Engineering (SAMPE) 2003 Symposium |
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City | Long Beach, California |
Period | 11/05/03 → 15/05/03 |
NREL Publication Number
- NREL/CP-520-33441
Keywords
- activation energy
- dark current
- electrical and electro-optical properties
- ion-implantation
- light-current
- PV
- semiconductors
- transport properties
- uranium dioxide (UO2)