Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence

Thomas Bidaud; John Moseley; Mowafak Al-Jassim; Mahisha Amarasinghe; Wyatt Metzger; Stephane Collin

doi:10.1109/PVSC40753.2019.9198976

Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence

Thomas Bidaud, John Moseley, Mowafak Al-Jassim, Mahisha Amarasinghe, Wyatt Metzger, Stephane Collin

Materials Science

University of Paris-Saclay

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized wereproduced by varying the CdC12 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail.Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC12temperature.

Original language	American English
Pages	3531-3534
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC40753.2019.9198976 https://doi.org/10.1109/PVSC40753.2019.9198976
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5K00-78463

Keywords

Cadmium Telluride thin films
cathodoluminescence
nanoscale-materials characterization
polycrystalline materials

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Bidaud, T., Moseley, J., Al-Jassim, M., Amarasinghe, M., Metzger, W., & Collin, S. (2019). Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence. 3531-3534. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.9198976, https://doi.org/10.1109/PVSC40753.2019.9198976

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title = "Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence",

abstract = "Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized wereproduced by varying the CdC12 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail.Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC12temperature.",

keywords = "Cadmium Telluride thin films, cathodoluminescence, nanoscale-materials characterization, polycrystalline materials",

author = "Thomas Bidaud and John Moseley and Mowafak Al-Jassim and Mahisha Amarasinghe and Wyatt Metzger and Stephane Collin",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

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doi = "10.1109/PVSC40753.2019.9198976",

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Bidaud, T, Moseley, J, Al-Jassim, M, Amarasinghe, M, Metzger, W & Collin, S 2019, 'Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 3531-3534. https://doi.org/10.1109/PVSC40753.2019.9198976, https://doi.org/10.1109/PVSC40753.2019.9198976

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T1 - Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence

AU - Bidaud, Thomas

AU - Moseley, John

AU - Al-Jassim, Mowafak

AU - Amarasinghe, Mahisha

AU - Metzger, Wyatt

AU - Collin, Stephane

PY - 2019/6

Y1 - 2019/6

N2 - Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized wereproduced by varying the CdC12 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail.Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC12temperature.

AB - Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized wereproduced by varying the CdC12 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail.Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC12temperature.

KW - Cadmium Telluride thin films

KW - cathodoluminescence

KW - nanoscale-materials characterization

KW - polycrystalline materials

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U2 - 10.1109/PVSC40753.2019.9198976

DO - 10.1109/PVSC40753.2019.9198976

M3 - Paper

AN - SCOPUS:85094909869

SP - 3531

EP - 3534

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence

Abstract

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Keywords

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