Spatially Resolved Photoluminescence in Partially Ordered GaInP2

S. Smith, H. M. Cheong, B. D. Fluegel, J. F. Geisz, J. M. Olson, L. L. Kazmerski, A. Mascarenhas

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Scanning confocal microscopy combined with high-resolution spectroscopy is used to probe the spatial variations in the low-temperature (5.0 K) photoluminescence (PL) of partially ordered GalnP2 with a spatial resolution of 0.7 μm. We observe large regions (1-2 μm) wherein the excitonic PL is suppressed up to a factor of four ("defect-rich" regions) when compared to unaffected areas. These defect-rich regions show a commensurate enhancement in the lower energy below gap emission. The spatial extent of this effect is inconsistent with the picture that the low-energy emission originates solely at the antiphase boundaries of the ordered domains and therefore must originate from other defects within the ordered domain as well.

Original languageAmerican English
Pages (from-to)706-708
Number of pages3
JournalApplied Physics Letters
Issue number5
StatePublished - 1 Feb 1999

NREL Publication Number

  • NREL/JA-590-26078


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