Spatially Resolved Photoluminescence in Partially Ordered GaInP2

S. Smith; H. M. Cheong; B. D. Fluegel; J. F. Geisz; J. M. Olson; L. L. Kazmerski; A. Mascarenhas

doi:10.1063/1.123189

Spatially Resolved Photoluminescence in Partially Ordered GaInP2

S. Smith, H. M. Cheong, B. D. Fluegel, J. F. Geisz, J. M. Olson, L. L. Kazmerski, A. Mascarenhas

National Renewable Energy Laboratory

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Abstract

Scanning confocal microscopy combined with high-resolution spectroscopy is used to probe the spatial variations in the low-temperature (5.0 K) photoluminescence (PL) of partially ordered GalnP₂ with a spatial resolution of 0.7 μm. We observe large regions (1-2 μm) wherein the excitonic PL is suppressed up to a factor of four ("defect-rich" regions) when compared to unaffected areas. These defect-rich regions show a commensurate enhancement in the lower energy below gap emission. The spatial extent of this effect is inconsistent with the picture that the low-energy emission originates solely at the antiphase boundaries of the ordered domains and therefore must originate from other defects within the ordered domain as well.

Original language	American English
Pages (from-to)	706-708
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	5
DOIs	https://doi.org/10.1063/1.123189 https://doi.org/10.1063/1.123189
State	Published - 1 Feb 1999

NREL Publication Number

NREL/JA-590-26078

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title = "Spatially Resolved Photoluminescence in Partially Ordered GaInP2",

abstract = "Scanning confocal microscopy combined with high-resolution spectroscopy is used to probe the spatial variations in the low-temperature (5.0 K) photoluminescence (PL) of partially ordered GalnP2 with a spatial resolution of 0.7 μm. We observe large regions (1-2 μm) wherein the excitonic PL is suppressed up to a factor of four ({"}defect-rich{"} regions) when compared to unaffected areas. These defect-rich regions show a commensurate enhancement in the lower energy below gap emission. The spatial extent of this effect is inconsistent with the picture that the low-energy emission originates solely at the antiphase boundaries of the ordered domains and therefore must originate from other defects within the ordered domain as well.",

author = "S. Smith and Cheong, {H. M.} and Fluegel, {B. D.} and Geisz, {J. F.} and Olson, {J. M.} and Kazmerski, {L. L.} and A. Mascarenhas",

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AU - Smith, S.

AU - Cheong, H. M.

AU - Fluegel, B. D.

AU - Geisz, J. F.

AU - Olson, J. M.

AU - Kazmerski, L. L.

AU - Mascarenhas, A.

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AB - Scanning confocal microscopy combined with high-resolution spectroscopy is used to probe the spatial variations in the low-temperature (5.0 K) photoluminescence (PL) of partially ordered GalnP2 with a spatial resolution of 0.7 μm. We observe large regions (1-2 μm) wherein the excitonic PL is suppressed up to a factor of four ("defect-rich" regions) when compared to unaffected areas. These defect-rich regions show a commensurate enhancement in the lower energy below gap emission. The spatial extent of this effect is inconsistent with the picture that the low-energy emission originates solely at the antiphase boundaries of the ordered domains and therefore must originate from other defects within the ordered domain as well.

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Spatially Resolved Photoluminescence in Partially Ordered GaInP2

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