Spectral Optical Properties of Cu2ZnSnS4 Thin Film Between 0.73 and 6.5 eV

Jian Li, Hui Du, John Yarbrough, Kim Jones, Glenn Teeter, Fred Lewis Terry, Dean Levi

Research output: Contribution to journalArticlepeer-review

30 Scopus Citations

Abstract

A polycrystalline Cu2ZnSnS4 thin film was deposited on fused quartz by co-evaporation. The selected thickness was ~100 nm to avoid artifacts in its optical properties caused by thicker as-grown films. The composition and phase of the film were checked with x-ray fluorescence, Raman shift spectroscopy, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. An improved spectroscopic ellipsometry methodology with two-side measurement geometries was applied to extract the complex dielectric functionε = ε1 + iε2 of the Cu2ZnSnS4 thin film between 0.73 and 6.5 eV. Five critical points were observed, at 1.32 (fundamental band gap), 2.92, 3.92, 4.96, and 5.62 eV, respectively. The ε spectra are in reasonable agreement with those from theoretical calculations.

Original languageAmerican English
Pages (from-to)A327-A332
JournalOptics Express
Volume20
Issue numberS2
DOIs
StatePublished - 12 Mar 2012

NREL Publication Number

  • NREL/JA-5200-54365

Keywords

  • photovoltaic
  • solar energy
  • thin film

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