Spectrally Resolved Localized States in GaAs(1-x) Bi(x)

Theresa M. Christian; Kirstin Alberi; Daniel A. Beaton; Brian Fluegel; Angelo Mascarenhas

doi:10.7567/JJAP.56.035801

Spectrally Resolved Localized States in GaAs(1-x) Bi(x)

Theresa M. Christian, Kirstin Alberi, Daniel A. Beaton, Brian Fluegel, Angelo Mascarenhas

Materials Science

Research output: Contribution to journal › Article › peer-review

12 Scopus Citations

Abstract

The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs_1-xBix. In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs_1-xBix. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34meV per % Bi, weaker than the redshift associated with band-To-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs_1-xBix alloys.

Original language	American English
Article number	035801
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	56
Issue number	3
DOIs	https://doi.org/10.7567/JJAP.56.035801 https://doi.org/10.7567/JJAP.56.035801
State	Published - 2017

Bibliographical note

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

NREL Publication Number

NREL/JA-5K00-67626

Keywords

band structure
localized states

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title = "Spectrally Resolved Localized States in GaAs(1-x) Bi(x)",

abstract = "The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs1-xBix. In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs1-xBix. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34meV per % Bi, weaker than the redshift associated with band-To-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs1-xBix alloys.",

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author = "Christian, {Theresa M.} and Kirstin Alberi and Beaton, {Daniel A.} and Brian Fluegel and Angelo Mascarenhas",

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doi = "10.7567/JJAP.56.035801",

language = "American English",

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T1 - Spectrally Resolved Localized States in GaAs(1-x) Bi(x)

AU - Christian, Theresa M.

AU - Alberi, Kirstin

AU - Beaton, Daniel A.

AU - Fluegel, Brian

AU - Mascarenhas, Angelo

PY - 2017

Y1 - 2017

N2 - The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs1-xBix. In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs1-xBix. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34meV per % Bi, weaker than the redshift associated with band-To-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs1-xBix alloys.

AB - The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs1-xBix. In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs1-xBix. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34meV per % Bi, weaker than the redshift associated with band-To-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs1-xBix alloys.

KW - band structure

KW - localized states

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DO - 10.7567/JJAP.56.035801

M3 - Article

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VL - 56

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3

M1 - 035801

ER -

Spectrally Resolved Localized States in GaAs(1-x) Bi(x)

Abstract

Bibliographical note

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Keywords

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