Spectrally Resolved Localized States in GaAs(1-x) Bi(x)

Theresa M. Christian, Kirstin Alberi, Daniel A. Beaton, Brian Fluegel, Angelo Mascarenhas

Research output: Contribution to journalArticlepeer-review

12 Scopus Citations


The role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs1-xBix. In this work, we present clear spectroscopic observations of recombination at several localized states in GaAs1-xBix. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34meV per % Bi, weaker than the redshift associated with band-To-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs1-xBix alloys.

Original languageAmerican English
Article number035801
Number of pages5
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number3
StatePublished - 2017

Bibliographical note

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.

NREL Publication Number

  • NREL/JA-5K00-67626


  • band structure
  • localized states


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