Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices

S. Pookpanratana; I. Repins; M. Bär; R. Félix; M. Blum; L. Weinhardt; W. Yang; J. D. Denlinger; M. A. Contreras; C. Heske

doi:10.1109/pvsc.2009.5411203

Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices

S. Pookpanratana, I. Repins, M. Bär, R. Félix, M. Blum, L. Weinhardt, W. Yang, J. D. Denlinger, M. A. Contreras, C. Heske

Materials, Chemical, and Computational Science

Research output: Contribution to conference › Paper › peer-review

Abstract

High-efficiency Cu(In_1-xGa_x)Se₂ (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4, and 12.5 minutes). We find evidence for the presence of Cd(OH)₂ at the CdS/CIGSe surface for the thickest CdS sample.

Original language	American English
Pages	1060-1063
Number of pages	4
DOIs	https://doi.org/10.1109/pvsc.2009.5411203 https://doi.org/10.1109/PVSC.2009.5411203
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09

NREL Publication Number

NREL/CP-520-48026

Keywords

high efficiency
photovoltaic
solar cell

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Pookpanratana, S., Repins, I., Bär, M., Félix, R., Blum, M., Weinhardt, L., Yang, W., Denlinger, J. D., Contreras, M. A., & Heske, C. (2009). Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices. 1060-1063. Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States. https://doi.org/10.1109/pvsc.2009.5411203, https://doi.org/10.1109/PVSC.2009.5411203

@conference{129adc2efffe462c86a8f6b2b0e16064,

title = "Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices",

abstract = "High-efficiency Cu(In1-xGax)Se2 (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4, and 12.5 minutes). We find evidence for the presence of Cd(OH)2 at the CdS/CIGSe surface for the thickest CdS sample.",

keywords = "high efficiency, photovoltaic, solar cell",

author = "S. Pookpanratana and I. Repins and M. B{\"a}r and R. F{\'e}lix and M. Blum and L. Weinhardt and W. Yang and Denlinger, {J. D.} and Contreras, {M. A.} and C. Heske",

year = "2009",

doi = "10.1109/pvsc.2009.5411203",

language = "American English",

pages = "1060--1063",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Pookpanratana, S, Repins, I, Bär, M, Félix, R, Blum, M, Weinhardt, L, Yang, W, Denlinger, JD, Contreras, MA & Heske, C 2009, 'Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices', Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 7/06/09 - 12/06/09 pp. 1060-1063. https://doi.org/10.1109/pvsc.2009.5411203, https://doi.org/10.1109/PVSC.2009.5411203

Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices. / Pookpanratana, S.; Repins, I.; Bär, M. et al.
2009. 1060-1063 Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices

AU - Pookpanratana, S.

AU - Repins, I.

AU - Bär, M.

AU - Félix, R.

AU - Blum, M.

AU - Weinhardt, L.

AU - Yang, W.

AU - Denlinger, J. D.

AU - Contreras, M. A.

AU - Heske, C.

PY - 2009

Y1 - 2009

N2 - High-efficiency Cu(In1-xGax)Se2 (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4, and 12.5 minutes). We find evidence for the presence of Cd(OH)2 at the CdS/CIGSe surface for the thickest CdS sample.

AB - High-efficiency Cu(In1-xGax)Se2 (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4, and 12.5 minutes). We find evidence for the presence of Cd(OH)2 at the CdS/CIGSe surface for the thickest CdS sample.

KW - high efficiency

KW - photovoltaic

KW - solar cell

UR - http://www.scopus.com/inward/record.url?scp=77951547907&partnerID=8YFLogxK

U2 - 10.1109/pvsc.2009.5411203

DO - 10.1109/pvsc.2009.5411203

M3 - Paper

AN - SCOPUS:77951547907

SP - 1060

EP - 1063

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

Pookpanratana S, Repins I, Bär M, Félix R, Blum M, Weinhardt L et al.. Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices. 2009. Paper presented at 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States. doi: 10.1109/pvsc.2009.5411203, 10.1109/PVSC.2009.5411203

Spectroscopic Analysis of the Chemical Structure at the CdS/Cu(In,Ga)Se2 Interface in High-Efficiency Solar Cell Devices

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