Abstract
This conference paper describes the spectroscopic cathodoluminescence (CL), electron-beam induced current (EBIC), and capacitance-Voltage (C-V) measurements are used to study the formation of CdS/CdTe devices processed using ion-beam milling and a ZnTe:Cu/Ti contact. Results show heating in vacuum at~360 deg C and ion-beam milling lead to observable changes in the CL emission from the CdCl2-treatedCdTe surface. Changes in the CL spectrum are also observed as ZnTe:Cu layer thickness increases. These changes are correlated to published studies of defect levels and shown to be due, possibly, to an n-type region existing between the ZnTe:Cu contact interface and the p-CdTe layers. This n-type region is eliminated once a sufficiently thick ZnTe:Cu layer is produced.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2002 |
| Event | 29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002 |
Conference
| Conference | 29th IEEE PV Specialists Conference |
|---|---|
| City | New Orleans, Louisiana |
| Period | 20/05/02 → 24/05/02 |
Bibliographical note
Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, LouisianaNREL Publication Number
- NREL/CP-520-31438
Keywords
- capacitance voltage (CV)
- electron-beam induced current (EBIC)
- PV
- spectroscopic cathodoluminescence (CL)