Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells

T. A. Gessert; M. J. Romero; S. Johnston; B. Keyes; P. Dippo

Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells

T. A. Gessert, M. J. Romero, S. Johnston, B. Keyes, P. Dippo

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

10 Scopus Citations

Abstract

Spectroscopic cathodoluminescence (CL), electron-beam induced current (EBIC), and capacitance-Voltage (C-V) measurements are used to study the formation of CdS/CdTe devices processed using ion-beam milling and a ZnTe:Cu/Ti contact. Results show heating in vacuum at ∼360°C and ion-beam milling lead to observable changes in the CL emission from the CdCl₂-treated CdTe surface. Changes in the CL spectrum are also observed as ZnTe:Cu layer thickness increases. These changes are correlated to published studies of defect levels and shown to be due, possibly, to an n-type region existing between the ZnTe:Cu contact interface and the p-CdTe layers. This n-type region is eliminated once a sufficiently thick ZnTe:Cu layer is produced.

Original language	American English
Pages	535-538
Number of pages	4
State	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-31438

NREL Publication Number

NREL/CP-520-33717

Cite this

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title = "Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells",

abstract = "Spectroscopic cathodoluminescence (CL), electron-beam induced current (EBIC), and capacitance-Voltage (C-V) measurements are used to study the formation of CdS/CdTe devices processed using ion-beam milling and a ZnTe:Cu/Ti contact. Results show heating in vacuum at ∼360°C and ion-beam milling lead to observable changes in the CL emission from the CdCl2-treated CdTe surface. Changes in the CL spectrum are also observed as ZnTe:Cu layer thickness increases. These changes are correlated to published studies of defect levels and shown to be due, possibly, to an n-type region existing between the ZnTe:Cu contact interface and the p-CdTe layers. This n-type region is eliminated once a sufficiently thick ZnTe:Cu layer is produced.",

author = "Gessert, {T. A.} and Romero, {M. J.} and S. Johnston and B. Keyes and P. Dippo",

note = "For preprint version including full text online document, see NREL/CP-520-31438; 29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

pages = "535--538",

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TY - CONF

T1 - Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells

AU - Gessert, T. A.

AU - Romero, M. J.

AU - Johnston, S.

AU - Keyes, B.

AU - Dippo, P.

N1 - For preprint version including full text online document, see NREL/CP-520-31438

PY - 2002

Y1 - 2002

N2 - Spectroscopic cathodoluminescence (CL), electron-beam induced current (EBIC), and capacitance-Voltage (C-V) measurements are used to study the formation of CdS/CdTe devices processed using ion-beam milling and a ZnTe:Cu/Ti contact. Results show heating in vacuum at ∼360°C and ion-beam milling lead to observable changes in the CL emission from the CdCl2-treated CdTe surface. Changes in the CL spectrum are also observed as ZnTe:Cu layer thickness increases. These changes are correlated to published studies of defect levels and shown to be due, possibly, to an n-type region existing between the ZnTe:Cu contact interface and the p-CdTe layers. This n-type region is eliminated once a sufficiently thick ZnTe:Cu layer is produced.

AB - Spectroscopic cathodoluminescence (CL), electron-beam induced current (EBIC), and capacitance-Voltage (C-V) measurements are used to study the formation of CdS/CdTe devices processed using ion-beam milling and a ZnTe:Cu/Ti contact. Results show heating in vacuum at ∼360°C and ion-beam milling lead to observable changes in the CL emission from the CdCl2-treated CdTe surface. Changes in the CL spectrum are also observed as ZnTe:Cu layer thickness increases. These changes are correlated to published studies of defect levels and shown to be due, possibly, to an n-type region existing between the ZnTe:Cu contact interface and the p-CdTe layers. This n-type region is eliminated once a sufficiently thick ZnTe:Cu layer is produced.

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M3 - Paper

AN - SCOPUS:0036953378

SP - 535

EP - 538

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Spectroscopic Cathodoluminescence Studies of the ZnTe:Cu Contact Process for CdS/CdTe Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

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