Abstract
We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantly in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.
Original language | American English |
---|---|
Pages | 3382-3385 |
Number of pages | 4 |
DOIs | |
State | Published - 18 Nov 2016 |
Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 |
Conference
Conference | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
---|---|
Country/Territory | United States |
City | Portland |
Period | 5/06/16 → 10/06/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.
NREL Publication Number
- NREL/CP-5K00-67959
Keywords
- cathodoluminescence
- CdTe solar cells
- grain boundaries
- grain interiors
- recombination