Spin Dependent Photoinduced Absorption in A-Si:H

Spin Dependent Photoinduced Absorption in A-Si:H

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Abstract

We have studied photoexcitation dynamics in undoped a-Si:H from 80 K to 300 K by the techniques of photoluminescence (PL), photoinduced absorption (PA) and their respective versions of optically detected magnetic resonance, namely PLDMR and PADMR. Both PL and PA spectra are composed of low and high energy bands, respectively. Using their respective temperature dependences we correlate the lowenergy PA band (approximately 0.4 eV) to the high energy PL band (approximately 1.3 eV) and the high energy PA band (approximately 1 eV) to the low energy PL band (approximately 0.8 eV). We also found that the PADMR spectrum is composed of three main contributions: a narrow resonance at g approximate 2 (FWHM = 15 G), a broad resonance at g approximate 2 (160 G) and a narrow asymmetric resonanceat g approximate 4 (20 G). By measuring their photon energy spectrum we found that the g approximate 4 and the broad g approximate 2 resonances are correlated with each other and therefore are due to trapped electron-hole pairs in the triplet spin configuration.

Original language	American English
Pages	179-183
Number of pages	5
State	Published - 1997
Event	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
City	San Francisco, California
Period	31/03/97 → 4/04/97

Bibliographical note

Work performed by University of Utah, Salt Lake City, Utah

NREL Publication Number

NREL/CP-520-24548

Cite this

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title = "Spin Dependent Photoinduced Absorption in A-Si:H",

abstract = "We have studied photoexcitation dynamics in undoped a-Si:H from 80 K to 300 K by the techniques of photoluminescence (PL), photoinduced absorption (PA) and their respective versions of optically detected magnetic resonance, namely PLDMR and PADMR. Both PL and PA spectra are composed of low and high energy bands, respectively. Using their respective temperature dependences we correlate the lowenergy PA band (approximately 0.4 eV) to the high energy PL band (approximately 1.3 eV) and the high energy PA band (approximately 1 eV) to the low energy PL band (approximately 0.8 eV). We also found that the PADMR spectrum is composed of three main contributions: a narrow resonance at g approximate 2 (FWHM = 15 G), a broad resonance at g approximate 2 (160 G) and a narrow asymmetric resonanceat g approximate 4 (20 G). By measuring their photon energy spectrum we found that the g approximate 4 and the broad g approximate 2 resonances are correlated with each other and therefore are due to trapped electron-hole pairs in the triplet spin configuration.",

author = "NREL",

note = "Work performed by University of Utah, Salt Lake City, Utah; Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

year = "1997",

language = "American English",

pages = "179--183",

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TY - CONF

T1 - Spin Dependent Photoinduced Absorption in A-Si:H

AU - NREL, null

N1 - Work performed by University of Utah, Salt Lake City, Utah

PY - 1997

Y1 - 1997

N2 - We have studied photoexcitation dynamics in undoped a-Si:H from 80 K to 300 K by the techniques of photoluminescence (PL), photoinduced absorption (PA) and their respective versions of optically detected magnetic resonance, namely PLDMR and PADMR. Both PL and PA spectra are composed of low and high energy bands, respectively. Using their respective temperature dependences we correlate the lowenergy PA band (approximately 0.4 eV) to the high energy PL band (approximately 1.3 eV) and the high energy PA band (approximately 1 eV) to the low energy PL band (approximately 0.8 eV). We also found that the PADMR spectrum is composed of three main contributions: a narrow resonance at g approximate 2 (FWHM = 15 G), a broad resonance at g approximate 2 (160 G) and a narrow asymmetric resonanceat g approximate 4 (20 G). By measuring their photon energy spectrum we found that the g approximate 4 and the broad g approximate 2 resonances are correlated with each other and therefore are due to trapped electron-hole pairs in the triplet spin configuration.

AB - We have studied photoexcitation dynamics in undoped a-Si:H from 80 K to 300 K by the techniques of photoluminescence (PL), photoinduced absorption (PA) and their respective versions of optically detected magnetic resonance, namely PLDMR and PADMR. Both PL and PA spectra are composed of low and high energy bands, respectively. Using their respective temperature dependences we correlate the lowenergy PA band (approximately 0.4 eV) to the high energy PL band (approximately 1.3 eV) and the high energy PA band (approximately 1 eV) to the low energy PL band (approximately 0.8 eV). We also found that the PADMR spectrum is composed of three main contributions: a narrow resonance at g approximate 2 (FWHM = 15 G), a broad resonance at g approximate 2 (160 G) and a narrow asymmetric resonanceat g approximate 4 (20 G). By measuring their photon energy spectrum we found that the g approximate 4 and the broad g approximate 2 resonances are correlated with each other and therefore are due to trapped electron-hole pairs in the triplet spin configuration.

M3 - Paper

SP - 179

EP - 183

T2 - Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

Spin Dependent Photoinduced Absorption in A-Si:H

Abstract

Conference

Bibliographical note

NREL Publication Number

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