Spin Dependent Photoinduced Absorption in A-Si:H

    Research output: Contribution to conferencePaper


    We have studied photoexcitation dynamics in undoped a-Si:H from 80 K to 300 K by the techniques of photoluminescence (PL), photoinduced absorption (PA) and their respective versions of optically detected magnetic resonance, namely PLDMR and PADMR. Both PL and PA spectra are composed of low and high energy bands, respectively. Using their respective temperature dependences we correlate the lowenergy PA band (approximately 0.4 eV) to the high energy PL band (approximately 1.3 eV) and the high energy PA band (approximately 1 eV) to the low energy PL band (approximately 0.8 eV). We also found that the PADMR spectrum is composed of three main contributions: a narrow resonance at g approximate 2 (FWHM = 15 G), a broad resonance at g approximate 2 (160 G) and a narrow asymmetric resonanceat g approximate 4 (20 G). By measuring their photon energy spectrum we found that the g approximate 4 and the broad g approximate 2 resonances are correlated with each other and therefore are due to trapped electron-hole pairs in the triplet spin configuration.
    Original languageAmerican English
    Number of pages5
    StatePublished - 1997
    EventAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California
    Duration: 31 Mar 19974 Apr 1997


    ConferenceAmorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
    CitySan Francisco, California

    Bibliographical note

    Work performed by University of Utah, Salt Lake City, Utah

    NREL Publication Number

    • NREL/CP-520-24548


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