Spontaneous Ordering in GaInP2: A Polarized-Piezomodulated-Reflectivity Study

R. G. Alonso; A. Mascarenhas; G. S. Horner; K. A. Bertness; S. R. Kurtz; J. M. Olson

doi:10.1103/PhysRevB.48.11833

Spontaneous Ordering in GaInP2: A Polarized-Piezomodulated-Reflectivity Study

R. G. Alonso, A. Mascarenhas, G. S. Horner, K. A. Bertness, S. R. Kurtz, J. M. Olson

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

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Abstract

Piezomodulated reflectivity is used to probe the electronic structure of GaInP2 epilayers grown by organometallic chemical-vapor epitaxy on misoriented [001] GaAs substrates. The epilayers, grown at different growth temperatures using 2° and 6° misoriented substrates, exhibit various degrees of ordering. Our study provides information on the fundamental gap, crystal-field splitting, and spin-orbit splitting for temperatures ranging from 6 to 250 K.

Original language	American English
Pages (from-to)	11833-11837
Number of pages	5
Journal	Physical Review B
Volume	48
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.48.11833 https://doi.org/10.1103/PhysRevB.48.11833
State	Published - 1993

NREL Publication Number

NREL/JA-451-5614

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abstract = "Piezomodulated reflectivity is used to probe the electronic structure of GaInP2 epilayers grown by organometallic chemical-vapor epitaxy on misoriented [001] GaAs substrates. The epilayers, grown at different growth temperatures using 2° and 6° misoriented substrates, exhibit various degrees of ordering. Our study provides information on the fundamental gap, crystal-field splitting, and spin-orbit splitting for temperatures ranging from 6 to 250 K.",

author = "Alonso, {R. G.} and A. Mascarenhas and Horner, {G. S.} and Bertness, {K. A.} and Kurtz, {S. R.} and Olson, {J. M.}",

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AU - Bertness, K. A.

AU - Kurtz, S. R.

AU - Olson, J. M.

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AB - Piezomodulated reflectivity is used to probe the electronic structure of GaInP2 epilayers grown by organometallic chemical-vapor epitaxy on misoriented [001] GaAs substrates. The epilayers, grown at different growth temperatures using 2° and 6° misoriented substrates, exhibit various degrees of ordering. Our study provides information on the fundamental gap, crystal-field splitting, and spin-orbit splitting for temperatures ranging from 6 to 250 K.

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Spontaneous Ordering in GaInP2: A Polarized-Piezomodulated-Reflectivity Study

Abstract

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