Sputter-Deposited WOx and MoOx for Hole Selective Contacts

Paul Ndione, Martin Bivour, Florian Zahringer, Martin Hermle

Research output: Contribution to journalArticlepeer-review

38 Scopus Citations

Abstract

Reactive sputter deposited tungsten and molybdenum oxide (WOx, MoOx) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WOx and MoOx towards higher work functions to improve the hole selectivity.

Original languageAmerican English
Pages (from-to)400-405
Number of pages6
JournalEnergy Procedia
Volume124
DOIs
StatePublished - 2017
Event7th International Conference on Silicon Photovoltaics, SiliconPV 2017 - Freiburg, Germany
Duration: 3 Apr 20175 Apr 2017

NREL Publication Number

  • NREL/JA-5J00-70502

Keywords

  • induced junction
  • Metal oxide
  • sputtering
  • work function

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