Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

Darius Kuciauskas; Adam Danielson; Amit Munshi; Arthur Onno; William Weigand; Anna Kindvall; Carey Reich; Zhengshan Yu; Jianwei Shi; Ali Abbas; John Walls; Zachary Holman; Walajabad Sampath

doi:10.1109/PVSC40753.2019.8980466

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

Darius Kuciauskas, Adam Danielson, Amit Munshi, Arthur Onno, William Weigand, Anna Kindvall, Carey Reich, Zhengshan Yu, Jianwei Shi, Ali Abbas, John Walls, Zachary Holman, Walajabad Sampath

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

A thin layer of Al₂O₃ at the back of CdSe_xT_e1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p⁺ amorphous silicon layer behind the Al₂O₃ bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al₂O₃, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl₂ passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

Original language	American English
Pages	3018-3023
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980466 https://doi.org/10.1109/PVSC40753.2019.8980466
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5900-76285

Keywords

a-Si
AlO
CdTe
charge carrier lifetime
passivating oxides
photovoltaic cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Kuciauskas, D., Danielson, A., Munshi, A., Onno, A., Weigand, W., Kindvall, A., Reich, C., Yu, Z., Shi, J., Abbas, A., Walls, J., Holman, Z., & Sampath, W. (2019). Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics. 3018-3023. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8980466, https://doi.org/10.1109/PVSC40753.2019.8980466

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title = "Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics",

abstract = "A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p+ amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.",

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author = "Darius Kuciauskas and Adam Danielson and Amit Munshi and Arthur Onno and William Weigand and Anna Kindvall and Carey Reich and Zhengshan Yu and Jianwei Shi and Ali Abbas and John Walls and Zachary Holman and Walajabad Sampath",

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year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980466",

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Kuciauskas, D, Danielson, A, Munshi, A, Onno, A, Weigand, W, Kindvall, A, Reich, C, Yu, Z, Shi, J, Abbas, A, Walls, J, Holman, Z & Sampath, W 2019, 'Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 3018-3023. https://doi.org/10.1109/PVSC40753.2019.8980466, https://doi.org/10.1109/PVSC40753.2019.8980466

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics. / Kuciauskas, Darius; Danielson, Adam; Munshi, Amit et al.
2019. 3018-3023 Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

AU - Kuciauskas, Darius

AU - Danielson, Adam

AU - Munshi, Amit

AU - Onno, Arthur

AU - Weigand, William

AU - Kindvall, Anna

AU - Reich, Carey

AU - Yu, Zhengshan

AU - Shi, Jianwei

AU - Abbas, Ali

AU - Walls, John

AU - Holman, Zachary

AU - Sampath, Walajabad

PY - 2019/6

Y1 - 2019/6

N2 - A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p+ amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

AB - A thin layer of Al2O3 at the back of CdSexTe1-x/CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p+ amorphous silicon layer behind the Al2O3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al2O3, amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

KW - a-Si

KW - AlO

KW - CdTe

KW - charge carrier lifetime

KW - passivating oxides

KW - photovoltaic cells

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T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Kuciauskas D, Danielson A, Munshi A, Onno A, Weigand W, Kindvall A et al.. Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics. 2019. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. doi: 10.1109/PVSC40753.2019.8980466, 10.1109/PVSC40753.2019.8980466

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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