Sputtered Nb- and Ta-doped TiO2 Transparent Conducting Oxide Films on Glass

Meagen A. Gillispie; Maikel F.A.M. van Hest; Matthew S. Dabney; John D. Perkins; David S. Ginley

doi:10.1557/JMR.2007.0353

Sputtered Nb- and Ta-doped TiO2 Transparent Conducting Oxide Films on Glass

Meagen A. Gillispie, Maikel F.A.M. van Hest, Matthew S. Dabney, John D. Perkins, David S. Ginley

Materials, Chemical, and Computational Science

Research output: Contribution to journal › Article › peer-review

52 Scopus Citations

Abstract

Radio frequency (rf) magnetron sputtering is used to deposit Ti_0.85 Nb_0.15O₂ and Ti_0.8 Ta_0.2O₂ films on glass substrates at substrate temperatures (T_S) ranging from ∼250 to 400 °C. The most conducting Nb-doped TiO₂ films were deposited at T_S = 370 °C, with conductivities of ∼60 S/cm, carrier concentrations of 1.5 × 10²¹ cm^-3 and mobilities <1 cm²/V·s. The conductivity of the films was limited by the mobility, which was more than 10 times lower than the mobility for films deposited epitaxially on SrTiO₃. The difference in properties is likely caused by the randomly oriented crystal structure of the films deposited on glass compared with biaxially textured films deposited on SrTiO₃. The anatase phase could not be stabilized in the Ta-doped TiO₂ films, likely because of the high dopant concentration.

Original language	American English
Pages (from-to)	2832-2837
Number of pages	6
Journal	Journal of Materials Research
Volume	22
Issue number	10
DOIs	https://doi.org/10.1557/JMR.2007.0353 https://doi.org/10.1557/jmr.2007.0353
State	Published - 2007

NREL Publication Number

NREL/JA-560-42505

Keywords

optical properties
sputtering
transparent conductor

Access to Document

Cite this

@article{b790ada1eaae4c568f0abb9a79086c8d,

title = "Sputtered Nb- and Ta-doped TiO2 Transparent Conducting Oxide Films on Glass",

abstract = "Radio frequency (rf) magnetron sputtering is used to deposit Ti0.85 Nb0.15O2 and Ti0.8 Ta0.2O2 films on glass substrates at substrate temperatures (TS) ranging from ∼250 to 400 °C. The most conducting Nb-doped TiO2 films were deposited at TS = 370 °C, with conductivities of ∼60 S/cm, carrier concentrations of 1.5 × 1021 cm-3 and mobilities <1 cm2/V·s. The conductivity of the films was limited by the mobility, which was more than 10 times lower than the mobility for films deposited epitaxially on SrTiO3. The difference in properties is likely caused by the randomly oriented crystal structure of the films deposited on glass compared with biaxially textured films deposited on SrTiO3. The anatase phase could not be stabilized in the Ta-doped TiO2 films, likely because of the high dopant concentration.",

keywords = "optical properties, sputtering, transparent conductor",

author = "Gillispie, {Meagen A.} and {van Hest}, {Maikel F.A.M.} and Dabney, {Matthew S.} and Perkins, {John D.} and Ginley, {David S.}",

year = "2007",

doi = "10.1557/JMR.2007.0353",

language = "American English",

volume = "22",

pages = "2832--2837",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

number = "10",

}

TY - JOUR

T1 - Sputtered Nb- and Ta-doped TiO2 Transparent Conducting Oxide Films on Glass

AU - Gillispie, Meagen A.

AU - van Hest, Maikel F.A.M.

AU - Dabney, Matthew S.

AU - Perkins, John D.

AU - Ginley, David S.

PY - 2007

Y1 - 2007

N2 - Radio frequency (rf) magnetron sputtering is used to deposit Ti0.85 Nb0.15O2 and Ti0.8 Ta0.2O2 films on glass substrates at substrate temperatures (TS) ranging from ∼250 to 400 °C. The most conducting Nb-doped TiO2 films were deposited at TS = 370 °C, with conductivities of ∼60 S/cm, carrier concentrations of 1.5 × 1021 cm-3 and mobilities <1 cm2/V·s. The conductivity of the films was limited by the mobility, which was more than 10 times lower than the mobility for films deposited epitaxially on SrTiO3. The difference in properties is likely caused by the randomly oriented crystal structure of the films deposited on glass compared with biaxially textured films deposited on SrTiO3. The anatase phase could not be stabilized in the Ta-doped TiO2 films, likely because of the high dopant concentration.

AB - Radio frequency (rf) magnetron sputtering is used to deposit Ti0.85 Nb0.15O2 and Ti0.8 Ta0.2O2 films on glass substrates at substrate temperatures (TS) ranging from ∼250 to 400 °C. The most conducting Nb-doped TiO2 films were deposited at TS = 370 °C, with conductivities of ∼60 S/cm, carrier concentrations of 1.5 × 1021 cm-3 and mobilities <1 cm2/V·s. The conductivity of the films was limited by the mobility, which was more than 10 times lower than the mobility for films deposited epitaxially on SrTiO3. The difference in properties is likely caused by the randomly oriented crystal structure of the films deposited on glass compared with biaxially textured films deposited on SrTiO3. The anatase phase could not be stabilized in the Ta-doped TiO2 films, likely because of the high dopant concentration.

KW - optical properties

KW - sputtering

KW - transparent conductor

UR - http://www.scopus.com/inward/record.url?scp=35448943565&partnerID=8YFLogxK

U2 - 10.1557/JMR.2007.0353

DO - 10.1557/JMR.2007.0353

M3 - Article

AN - SCOPUS:35448943565

SN - 0884-2914

VL - 22

SP - 2832

EP - 2837

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 10

ER -

Sputtered Nb- and Ta-doped TiO2 Transparent Conducting Oxide Films on Glass

Abstract

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this