Stability and Ternary Chalcopyrite Photovoltaic Devices

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations


The present investigation produced the following conclusions: The growth techniques and deposition parameters used in the production of the ternary film critically affect structural and electrical properties and the related stability of the device; the diffusion of many elements into crystalline regions is independent of the diffusing species, and the diffusion coefficient is relatively high due to the vacancy population in the ternary; the interdiffusion along grain boundaries in the CdS/Cu-ternary devices can result in the degradation and failure of the devices, especially at temperatures exceeding 500 degree K; and, due to the fast diffusion of metals into ternaries, the reliability of the contacts may prove to be a problem.

Original languageAmerican English
Number of pages11
StatePublished - Aug 1979
Externally publishedYes
EventNBS/DOE Workshop on the Stability of Thin Film Solar Cells and Materials - Gaithersburg,Maryland
Duration: 1 May 19783 May 1978


ConferenceNBS/DOE Workshop on the Stability of Thin Film Solar Cells and Materials

NREL Publication Number

  • ACNR/CP-213-3810


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