Stability and Ternary Chalcopyrite Photovoltaic Devices

The present investigation produced the following conclusions: The growth techniques and deposition parameters used in the production of the ternary film critically affect structural and electrical properties and the related stability of the device; the diffusion of many elements into crystalline regions is independent of the diffusing species, and the diffusion coefficient is relatively high due to the vacancy population in the ternary; the interdiffusion along grain boundaries in the CdS/Cu-ternary devices can result in the degradation and failure of the devices, especially at temperatures exceeding 500 degree K; and, due to the fast diffusion of metals into ternaries, the reliability of the contacts may prove to be a problem.