Abstract
A dual bandgap, dual junction a-Si:H/a-SiGe:H device has been selected as the structure to be used in Solarex's new 10 MW solar module plant. This structure offers high initial efficiency, good stability, low material usage, and short deposition time. Thousands of one square foot and four square foot tandem modules have been produced on the Solarex pilot line, and an average of 8% stabilizedefficiency on 4 square foot modules in our trial production, and 8.6% on 1 square foot modules in R&D were achieved with this structure. Good agreement was found in the stability of modules tested outdoors and indoors, and also with an array of test modules set up at NREL. An improved tandem structure with better stability is being developed by optimizing the i-layer thickness and back junctionbandgap. The current loss associated with thinner i-layers was well compensated by improvements in FF, Voc, and stability. Two environmental degradation modes for modules other than Staebler-Wronski effect were identified and solutions implemented.
Original language | American English |
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Pages | 1137-1140 |
Number of pages | 4 |
DOIs | |
State | Published - 1996 |
Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
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City | Washington, D.C. |
Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by Solarex, Newtown, PennsylvaniaNREL Publication Number
- NREL/CP-22513