Stability of Single and Tandem Junction a-Si:H Solar Cells Grown Using the ECR Process

Stability of Single and Tandem Junction a-Si:H Solar Cells Grown Using the ECR Process

NREL

Research output: Contribution to conference › Paper

Abstract

We report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/a-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). We show that devices with high fill factors can be made using the H-ECR process. We also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show verylittle degradation even after 500 hours of illumination under 2 x sunlight illumination.

Original language	American English
Pages	813-817
Number of pages	5
State	Published - 1997
Event	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
City	San Francisco, California
Period	31/03/97 → 4/04/97

Bibliographical note

Work performed by Iowa State University, Ames, Iowa

NLR Publication Number

NREL/CP-520-24566

Cite this

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title = "Stability of Single and Tandem Junction a-Si:H Solar Cells Grown Using the ECR Process",

abstract = "We report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/a-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). We show that devices with high fill factors can be made using the H-ECR process. We also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show verylittle degradation even after 500 hours of illumination under 2 x sunlight illumination.",

author = "NREL",

note = "Work performed by Iowa State University, Ames, Iowa; Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

year = "1997",

language = "American English",

pages = "813--817",

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TY - CONF

T1 - Stability of Single and Tandem Junction a-Si:H Solar Cells Grown Using the ECR Process

AU - NREL, null

N1 - Work performed by Iowa State University, Ames, Iowa

PY - 1997

Y1 - 1997

N2 - We report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/a-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). We show that devices with high fill factors can be made using the H-ECR process. We also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show verylittle degradation even after 500 hours of illumination under 2 x sunlight illumination.

AB - We report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/a-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). We show that devices with high fill factors can be made using the H-ECR process. We also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show verylittle degradation even after 500 hours of illumination under 2 x sunlight illumination.

M3 - Paper

SP - 813

EP - 817

T2 - Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

Stability of Single and Tandem Junction a-Si:H Solar Cells Grown Using the ECR Process

Abstract

Conference

Bibliographical note

NLR Publication Number

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Cite this