Stable a-Si:H-Based Multijunction Solar Cells with Guidance from Real-Time Optics: Final Report, 17 July 1998--16 November 2001

Research output: NRELSubcontract Report

Abstract

This report describes the new insights obtained into the growth of hydrogenated silicon (Si:H) films via real-time spectroscopic ellipsometry (RTSE) measurements. Evolutionary phase diagrams were expanded to include the effects of different deposition conditions, including rf power, pressure, and temperature. Detailed studies of degradation kinetics in thin films and corresponding solar cellshave been carried out. Both p-i-n and n-i-p solar cells that incorporate Si:H i-layers deposited with and without H2-dilution have been studied. For the first time, direct and reliable correlations have been obtained between the light-induced changes in thin-film materials and the degradation of the corresponding solar cells.
Original languageAmerican English
Number of pages70
StatePublished - 2002

Bibliographical note

Work performed by The Pennsylvania State University, University Park, Pennsylvania

NREL Publication Number

  • NREL/SR-520-32692

Keywords

  • amorphous silicon
  • degradation kinetics
  • high rate growth
  • hydrogen dilution
  • mixed-phase-optimization microcrystalline materials
  • plasma-enhanced chemical vapor deposition (PECVD)
  • PV
  • real-time optics
  • real-time spectroscopic ellipsometry (RTSE)
  • sun illumination

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