Steady-State and Time-Resolved Photoconductivity Measurements of Minority Carrier Lifetime in ZnTe

D. N. Bose, R. K. Ahrenkiel, S. Bhunia

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Minority carrier lifetime in ZnTe has been determined from steady-state and time-resolved photoconductivity (PC) measurements. Three types of single crystal p-ZnTe (EG = 2.26 eV) grown by the Bridgman technique were studied: (i) as-grown, before and after hydrogen passivation, (ii) Zn annealed, and (iii) In-doped semi-insulating. Steady-state photoconductivity was studied between 80 and 300 K and showed that for as-grown samples, the lifetime went through a sharp maximum of 4.5 × 10-7 s at 220 K, decreasing to 2.5 × 10-8 s at 300 K. For hydrogen passivated samples, the low temperature behavior was similar but the lifetime remained high at 4.5 × 10-7 s at 300 K, due to passivation of deep acceptors OTe. Time-resolved photoconductivity measurements gave a value of 4.6 × 10-8 s for as-grown ZnTe in reasonably good agreement and 3.2 × 10-7 s for Zn annealed and 3.1 × 10-7 s for SI-ZnTe. The radiative recombination constant B was thus found to be 1.4 × 10-9 and 4 × 10-10 cm3 s-1, respectively, at 300 K for as-grown and Zn-annealed samples. PC spectral response studies showed a maximum at 2.41 eV at 300 K corresponding to the main valence-conduction band transition as well as a feature near 3.2 eV corresponding to the splitoff band. Slight shift in peak energy to 2.43 eV occurred on H surface passivation due to reduction of surface recombination velocity.

Original languageAmerican English
Pages (from-to)6599-6601
Number of pages3
JournalJournal of Applied Physics
Issue number11
StatePublished - 1999

NREL Publication Number

  • NREL/JA-520-27890


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