Strain-Dependent Morphology of Spontaneous Lateral Composition Modulations in (AlAs)m(InAs)n Short Period Superlattices Grown by Molecular Beam Epitaxy

A. G. Norman, S. P. Ahrenkiel, H. Moutinho, M. M. Al-Jassim, A. Mascarenhas, J. Mirecki Millunchick, S. R. Lee, R. D. Twesten, D. M. Follstaedt, J. L. Reno, E. D. Jones

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Abstract

The nature of spontaneous lateral composition modulation and its relationship to surface morphology during the growth of (AlAs)m(InAs)n short-period superlattices by molecular beam epitaxy are investigated as a function of the global strain between the short-period superlattice and (001)InP substrate. For samples grown under tension, transmission electron and atomic force microscopy reveal composition modulations along directions close to 〈310〉 coupled to a surface cusping. For samples grown under compression, we observe composition modulations roughly along the elastically soft 〈100〉 directions coupled to a surface rippling. For high strains (≥0.7%), with individual InAs layer thicknesses ≤1.6 monolayers, we observe weak or no composition modulations.

Original languageAmerican English
Pages (from-to)1844-1846
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number13
DOIs
StatePublished - 1998

Bibliographical note

Work performed by National Renewable Energy Laboratory, Golden, Colorado; and Sandia National Laboratories, Albuquerque, New Mexico

NREL Publication Number

  • NREL/JA-520-24776

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