Strain-Dependent Morphology of Spontaneous Lateral Composition Modulations in (AlAs)m(InAs)n Short Period Superlattices Grown by Molecular Beam Epitaxy

A. G. Norman; S. P. Ahrenkiel; H. Moutinho; M. M. Al-Jassim; A. Mascarenhas; J. Mirecki Millunchick; S. R. Lee; R. D. Twesten; D. M. Follstaedt; J. L. Reno; E. D. Jones

doi:10.1063/1.122301

Strain-Dependent Morphology of Spontaneous Lateral Composition Modulations in (AlAs)m(InAs)n Short Period Superlattices Grown by Molecular Beam Epitaxy

A. G. Norman
, S. P. Ahrenkiel
, H. Moutinho
, M. M. Al-Jassim
, A. Mascarenhas
, J. Mirecki Millunchick
, S. R. Lee
, R. D. Twesten
, D. M. Follstaedt
, J. L. Reno
, E. D. Jones

Materials Science

Research output: Contribution to journal › Article › peer-review

46 Scopus Citations

Abstract

The nature of spontaneous lateral composition modulation and its relationship to surface morphology during the growth of (AlAs)_m(InAs)_n short-period superlattices by molecular beam epitaxy are investigated as a function of the global strain between the short-period superlattice and (001)InP substrate. For samples grown under tension, transmission electron and atomic force microscopy reveal composition modulations along directions close to 〈310〉 coupled to a surface cusping. For samples grown under compression, we observe composition modulations roughly along the elastically soft 〈100〉 directions coupled to a surface rippling. For high strains (≥0.7%), with individual InAs layer thicknesses ≤1.6 monolayers, we observe weak or no composition modulations.

Original language	American English
Pages (from-to)	1844-1846
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	13
DOIs	https://doi.org/10.1063/1.122301 https://doi.org/10.1063/1.122301
State	Published - 1998

Bibliographical note

Work performed by National Renewable Energy Laboratory, Golden, Colorado; and Sandia National Laboratories, Albuquerque, New Mexico

NLR Publication Number

NREL/JA-520-24776

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Norman, A. G., Ahrenkiel, S. P., Moutinho, H., Al-Jassim, M. M., Mascarenhas, A., Mirecki Millunchick, J., Lee, S. R., Twesten, R. D., Follstaedt, D. M., Reno, J. L., & Jones, E. D. (1998). Strain-Dependent Morphology of Spontaneous Lateral Composition Modulations in (AlAs)m(InAs)n Short Period Superlattices Grown by Molecular Beam Epitaxy. Applied Physics Letters, 73(13), 1844-1846. https://doi.org/10.1063/1.122301, https://doi.org/10.1063/1.122301

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title = "Strain-Dependent Morphology of Spontaneous Lateral Composition Modulations in (AlAs)m(InAs)n Short Period Superlattices Grown by Molecular Beam Epitaxy",

abstract = "The nature of spontaneous lateral composition modulation and its relationship to surface morphology during the growth of (AlAs)m(InAs)n short-period superlattices by molecular beam epitaxy are investigated as a function of the global strain between the short-period superlattice and (001)InP substrate. For samples grown under tension, transmission electron and atomic force microscopy reveal composition modulations along directions close to 〈310〉 coupled to a surface cusping. For samples grown under compression, we observe composition modulations roughly along the elastically soft 〈100〉 directions coupled to a surface rippling. For high strains (≥0.7\%), with individual InAs layer thicknesses ≤1.6 monolayers, we observe weak or no composition modulations.",

author = "Norman, \{A. G.\} and Ahrenkiel, \{S. P.\} and H. Moutinho and Al-Jassim, \{M. M.\} and A. Mascarenhas and \{Mirecki Millunchick\}, J. and Lee, \{S. R.\} and Twesten, \{R. D.\} and Follstaedt, \{D. M.\} and Reno, \{J. L.\} and Jones, \{E. D.\}",

note = "Work performed by National Renewable Energy Laboratory, Golden, Colorado; and Sandia National Laboratories, Albuquerque, New Mexico",

year = "1998",

doi = "10.1063/1.122301",

language = "American English",

volume = "73",

pages = "1844--1846",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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Norman, AG, Ahrenkiel, SP, Moutinho, H, Al-Jassim, MM, Mascarenhas, A, Mirecki Millunchick, J, Lee, SR, Twesten, RD, Follstaedt, DM, Reno, JL & Jones, ED 1998, 'Strain-Dependent Morphology of Spontaneous Lateral Composition Modulations in (AlAs)m(InAs)n Short Period Superlattices Grown by Molecular Beam Epitaxy', Applied Physics Letters, vol. 73, no. 13, pp. 1844-1846. https://doi.org/10.1063/1.122301, https://doi.org/10.1063/1.122301

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T1 - Strain-Dependent Morphology of Spontaneous Lateral Composition Modulations in (AlAs)m(InAs)n Short Period Superlattices Grown by Molecular Beam Epitaxy

AU - Norman, A. G.

AU - Ahrenkiel, S. P.

AU - Moutinho, H.

AU - Al-Jassim, M. M.

AU - Mascarenhas, A.

AU - Mirecki Millunchick, J.

AU - Lee, S. R.

AU - Twesten, R. D.

AU - Follstaedt, D. M.

AU - Reno, J. L.

AU - Jones, E. D.

N1 - Work performed by National Renewable Energy Laboratory, Golden, Colorado; and Sandia National Laboratories, Albuquerque, New Mexico

PY - 1998

Y1 - 1998

N2 - The nature of spontaneous lateral composition modulation and its relationship to surface morphology during the growth of (AlAs)m(InAs)n short-period superlattices by molecular beam epitaxy are investigated as a function of the global strain between the short-period superlattice and (001)InP substrate. For samples grown under tension, transmission electron and atomic force microscopy reveal composition modulations along directions close to 〈310〉 coupled to a surface cusping. For samples grown under compression, we observe composition modulations roughly along the elastically soft 〈100〉 directions coupled to a surface rippling. For high strains (≥0.7%), with individual InAs layer thicknesses ≤1.6 monolayers, we observe weak or no composition modulations.

AB - The nature of spontaneous lateral composition modulation and its relationship to surface morphology during the growth of (AlAs)m(InAs)n short-period superlattices by molecular beam epitaxy are investigated as a function of the global strain between the short-period superlattice and (001)InP substrate. For samples grown under tension, transmission electron and atomic force microscopy reveal composition modulations along directions close to 〈310〉 coupled to a surface cusping. For samples grown under compression, we observe composition modulations roughly along the elastically soft 〈100〉 directions coupled to a surface rippling. For high strains (≥0.7%), with individual InAs layer thicknesses ≤1.6 monolayers, we observe weak or no composition modulations.

UR - https://www.scopus.com/pages/publications/0000379384

U2 - 10.1063/1.122301

DO - 10.1063/1.122301

M3 - Article

AN - SCOPUS:0000379384

SN - 0003-6951

VL - 73

SP - 1844

EP - 1846

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Strain-Dependent Morphology of Spontaneous Lateral Composition Modulations in (AlAs)m(InAs)n Short Period Superlattices Grown by Molecular Beam Epitaxy

Abstract

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