Strain Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State: Article No. 195503

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NLR Publication Number

@article{b885358724864546b738749ed1abe0e3,

title = "Strain Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State: Article No. 195503",

keywords = "doping efficiency, semiconductors",

author = "Su-Huai Wei and Junyi Zhu and Feng Liu and G.B. Stringfellow",

year = "2010",

doi = "10.1103/PhysRevLett.105.195503",

language = "American English",

volume = "105",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "19",

}

TY - JOUR

T1 - Strain Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State

T2 - Article No. 195503

AU - Wei, Su-Huai

AU - Zhu, Junyi

AU - Liu, Feng

AU - Stringfellow, G.B.

PY - 2010

Y1 - 2010

KW - doping efficiency

KW - semiconductors

U2 - 10.1103/PhysRevLett.105.195503

DO - 10.1103/PhysRevLett.105.195503

M3 - Article

SN - 0031-9007

VL - 105

JO - Physical Review Letters

JF - Physical Review Letters

IS - 19

ER -