Strain-Induced Interfacial Hole Localization in Self-Assembled Quantum Dots: Compressive InAs/GaAs versus Tensile InAs/InSb: Article No. 235316

doi:10.1103/PhysRevB.70.235316

Strain-Induced Interfacial Hole Localization in Self-Assembled Quantum Dots: Compressive InAs/GaAs versus Tensile InAs/InSb: Article No. 235316

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	9
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.70.235316
State	Published - 2004

NREL Publication Number

NREL/JA-590-37867

Access to Document

10.1103/PhysRevB.70.235316

Cite this

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title = "Strain-Induced Interfacial Hole Localization in Self-Assembled Quantum Dots: Compressive InAs/GaAs versus Tensile InAs/InSb: Article No. 235316",

author = "NREL",

year = "2004",

doi = "10.1103/PhysRevB.70.235316",

language = "American English",

volume = "70",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "23",

}

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T1 - Strain-Induced Interfacial Hole Localization in Self-Assembled Quantum Dots: Compressive InAs/GaAs versus Tensile InAs/InSb

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AU - NREL, null

PY - 2004

Y1 - 2004

U2 - 10.1103/PhysRevB.70.235316

DO - 10.1103/PhysRevB.70.235316

M3 - Article

SN - 1098-0121

VL - 70

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

ER -