Stress Testing of CdTe Solar Cells

    Research output: Contribution to conferencePaper


    CdTe/CdS solar cells have been known to exhibit various combinations of reversible and irreversible degradation of conversion efficiency after being subjected to temperature, voltage and illumination at levels which equal or surpass those expected in field conditions. This document describes a series of measurements designed to quantify these phenomena. The QE and light and dark J-Vcharacteristics of a set of CdTe devices were measured, then devices were subjected to various combinations of stresses within the parameter space of 0-70 mW/cm/sup2/ illumination, -0.5 V to +5 mA/cm/sup 2/ electrical bias, and temperatures from 72 deg. to 112 deg. C. The device characteristics were measured and changes are interpreted in the context of an equivalent circuit which includes theeffects of both the main junction diode, series resistor and a rectifying back contact.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by the University of Delaware, Newark, Delaware

    NREL Publication Number

    • NREL/CP-22404


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