Stress Variations Due to Microcracks in GaAs Grown on Si

Research output: Contribution to journal › Article

Work performed by GTE Laboratories, Waltham, Massachusetts, and Solar Energy Research Institute, Golden, Colorado

NLR Publication Number

@article{6ec0808543be4b79b9d576f5d8398f6a,

title = "Stress Variations Due to Microcracks in GaAs Grown on Si",

author = "NREL",

note = "Work performed by GTE Laboratories, Waltham, Massachusetts, and Solar Energy Research Institute, Golden, Colorado",

year = "1987",

doi = "10.1063/1.98951",

language = "American English",

volume = "51",

pages = "2236--2238",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Stress Variations Due to Microcracks in GaAs Grown on Si

AU - NREL, null

N1 - Work performed by GTE Laboratories, Waltham, Massachusetts, and Solar Energy Research Institute, Golden, Colorado

PY - 1987

Y1 - 1987

U2 - 10.1063/1.98951

DO - 10.1063/1.98951

M3 - Article

SN - 0003-6951

VL - 51

SP - 2236

EP - 2238

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -