Strong Emission of THz Radiation from GaAs Microstructures on Si: Article No. 125027

Kwangwook Park; Aadil Latif; Inhee Maeng; Gyuseok Lee; Chul Kang; Gun Ju; Yong-Tak Lee; Chul-Sik Kee

doi:10.1063/1.5079668

Strong Emission of THz Radiation from GaAs Microstructures on Si: Article No. 125027

Kwangwook Park, Aadil Latif, Inhee Maeng, Gyuseok Lee, Chul Kang, Gun Ju, Yong-Tak Lee, Chul-Sik Kee

Gwangju Institute of Science & Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus Citations

Abstract

Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

Original language	American English
Number of pages	7
Journal	AIP Advances
Volume	8
Issue number	12
DOIs	https://doi.org/10.1063/1.5079668
State	Published - 2018

NREL Publication Number

NREL/JA-5K00-73196

Keywords

epitaxy
femtosecond lasers
microstructural properties
photoluminescence spectroscopy
semiconductors
terahertz radiation
terahertz time-domain spectroscopy
THz time-domain spectroscopy

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10.1063/1.5079668

https://www.nrel.gov/docs/fy19osti/73196.pdf

Cite this

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title = "Strong Emission of THz Radiation from GaAs Microstructures on Si: Article No. 125027",

abstract = "Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.",

keywords = "epitaxy, femtosecond lasers, microstructural properties, photoluminescence spectroscopy, semiconductors, terahertz radiation, terahertz time-domain spectroscopy, THz time-domain spectroscopy",

author = "Kwangwook Park and Aadil Latif and Inhee Maeng and Gyuseok Lee and Chul Kang and Gun Ju and Yong-Tak Lee and Chul-Sik Kee",

year = "2018",

doi = "10.1063/1.5079668",

language = "American English",

volume = "8",

journal = "AIP Advances",

issn = "2158-3226",

number = "12",

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TY - JOUR

T1 - Strong Emission of THz Radiation from GaAs Microstructures on Si

T2 - Article No. 125027

AU - Park, Kwangwook

AU - Latif, Aadil

AU - Maeng, Inhee

AU - Lee, Gyuseok

AU - Kang, Chul

AU - Ju, Gun

AU - Lee, Yong-Tak

AU - Kee, Chul-Sik

PY - 2018

Y1 - 2018

N2 - Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

AB - Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

KW - epitaxy

KW - femtosecond lasers

KW - microstructural properties

KW - photoluminescence spectroscopy

KW - semiconductors

KW - terahertz radiation

KW - terahertz time-domain spectroscopy

KW - THz time-domain spectroscopy

U2 - 10.1063/1.5079668

DO - 10.1063/1.5079668

M3 - Article

SN - 2158-3226

VL - 8

JO - AIP Advances

JF - AIP Advances

IS - 12

ER -

Strong Emission of THz Radiation from GaAs Microstructures on Si: Article No. 125027

Abstract

NREL Publication Number

Keywords

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