Structural and Electrical Characterization of InAs Grown on GaAs Substrates by Molecular-Beam Epitaxy

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)770-774
    Number of pages5
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Issue number3
    StatePublished - 1989

    Bibliographical note

    Work performed by Solar Energy Research Institute, Golden, Colorado, and GTE Laboratories, Waltham, Massachusetts

    NREL Publication Number

    • ACNR/JA-213-11357

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