Structural and Electronic Properties of Indium-Doped n-type Cd-Se-Te Crystals

Jing Shang, Magesh Murugesan, Rubi Gul, Samuel Bigbee-Hansen, Joseph Tallan, Joel Duenow, John McCloy

Research output: Contribution to journalArticlepeer-review

Abstract

We present a comprehensive investigation into the potential of n-type indium-doped cadmium selenide telluride (CST:In) as a high-performance candidate for solar cell applications, without the need for resource-intensive post-growth treatments that are required for CdTe:In. We compared undoped CST and CST:In crystals under different growth conditions, analyzing their structural and electronic properties using x-ray diffraction (XRD), electron probe microanalysis (EPMA), current-voltage (IV) and Hall effect measurements, time-resolved photoluminescence (TRPL), optical transmission, and photoluminescence (PL) mapping. The results reveal that as-grown CST:In crystals achieve nearly 100% carrier activation, yielding an electron concentration of 9.5x1018 cm-3, mobility of 653 cm2/V.s and a 5 ns lifetime which approaches the radiative limit. Furthermore, comparison of PL maps from crystal growths having different cooling profiles suggests a strong effect of cooling rate on selenium segregation and cubic/hexagonal/polytype phase distribution. Slower cooling leads to a more homogeneous cubic structure with lower Se segregation, while a faster cooling rate results in increased Se segregation, and twin boundaries and stacking faults with polytypic and hexagonal character.
Original languageAmerican English
Pages (from-to)3848-3860
Number of pages13
JournalJournal of Electronic Materials
Volume53
Issue number7
DOIs
StatePublished - 2024

NREL Publication Number

  • NREL/JA-5K00-89957

Keywords

  • Cd-Se-Te
  • crystal growth
  • Hall effect
  • photoluminescence mapping
  • solar cells
  • time-resolved photoluminescence

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