Structural and Optical Properties of Multi-Stack InAs/GaAsSb Quantum Dots with Different Sb Composition

Darius Kuciauskas; Patricia Dippo; Yeongho im; Nikolai Faleev; Dinghao Tang; David Smith; Christiana Honsberg

doi:10.1109/PVSC.2014.6925095

Structural and Optical Properties of Multi-Stack InAs/GaAsSb Quantum Dots with Different Sb Composition

Darius Kuciauskas, Patricia Dippo, Yeongho im, Nikolai Faleev, Dinghao Tang, David Smith, Christiana Honsberg

Arizona State University

Research output: Contribution to conference › Paper › peer-review

Abstract

The impact of the Sb composition on the structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) were investigated using transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL). The TEM images demonstrate that the Sb composition affects the change in the QD density and morphology. From analysis of XRD reciprocal space maps (RSMs) of the (224) asymmetrical reflection, it is found that as the Sb composition increases the relaxation of the initial elastic stress of the GaAsSb increases up to 23 %. In addition, the Sb composition influences the interband optical transitions such as the PL peak redshift and carrier lifetimes.

Original language	American English
Pages	1056-1058
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2014.6925095 https://doi.org/10.1109/PVSC.2014.6925095
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5J00-63680

Keywords

carrier lifetime
crystalline defects
intermediate band solar cells
photoluminescence
quantum dots

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Kuciauskas, D., Dippo, P., im, Y., Faleev, N., Tang, D., Smith, D., & Honsberg, C. (2014). Structural and Optical Properties of Multi-Stack InAs/GaAsSb Quantum Dots with Different Sb Composition. 1056-1058. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925095, https://doi.org/10.1109/PVSC.2014.6925095

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abstract = "The impact of the Sb composition on the structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) were investigated using transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL). The TEM images demonstrate that the Sb composition affects the change in the QD density and morphology. From analysis of XRD reciprocal space maps (RSMs) of the (224) asymmetrical reflection, it is found that as the Sb composition increases the relaxation of the initial elastic stress of the GaAsSb increases up to 23 %. In addition, the Sb composition influences the interband optical transitions such as the PL peak redshift and carrier lifetimes.",

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author = "Darius Kuciauskas and Patricia Dippo and Yeongho im and Nikolai Faleev and Dinghao Tang and David Smith and Christiana Honsberg",

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Kuciauskas, D, Dippo, P, im, Y, Faleev, N, Tang, D, Smith, D & Honsberg, C 2014, 'Structural and Optical Properties of Multi-Stack InAs/GaAsSb Quantum Dots with Different Sb Composition', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 1056-1058. https://doi.org/10.1109/PVSC.2014.6925095, https://doi.org/10.1109/PVSC.2014.6925095

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T1 - Structural and Optical Properties of Multi-Stack InAs/GaAsSb Quantum Dots with Different Sb Composition

AU - Kuciauskas, Darius

AU - Dippo, Patricia

AU - im, Yeongho

AU - Faleev, Nikolai

AU - Tang, Dinghao

AU - Smith, David

AU - Honsberg, Christiana

PY - 2014/10/15

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N2 - The impact of the Sb composition on the structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) were investigated using transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL). The TEM images demonstrate that the Sb composition affects the change in the QD density and morphology. From analysis of XRD reciprocal space maps (RSMs) of the (224) asymmetrical reflection, it is found that as the Sb composition increases the relaxation of the initial elastic stress of the GaAsSb increases up to 23 %. In addition, the Sb composition influences the interband optical transitions such as the PL peak redshift and carrier lifetimes.

AB - The impact of the Sb composition on the structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) were investigated using transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photoluminescence (PL). The TEM images demonstrate that the Sb composition affects the change in the QD density and morphology. From analysis of XRD reciprocal space maps (RSMs) of the (224) asymmetrical reflection, it is found that as the Sb composition increases the relaxation of the initial elastic stress of the GaAsSb increases up to 23 %. In addition, the Sb composition influences the interband optical transitions such as the PL peak redshift and carrier lifetimes.

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KW - crystalline defects

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T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

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ER -

Structural and Optical Properties of Multi-Stack InAs/GaAsSb Quantum Dots with Different Sb Composition

Abstract

Conference

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Keywords

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