Structural Changes During Annealing of GaInAsN

Sarah Kurtz; J. Webb; L. Gedvilas; D. Friedman; J. Geisz; J. Olson; R. King; D. Joslin; N. Karam

doi:10.1063/1.1345819

Structural Changes During Annealing of GaInAsN

Sarah Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, N. Karam

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Abstract

The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at ∼470 cm^-1 (Ga-N stretch) and two or three bands at ∼3100 cm^-1 (N-H stretch). The change in the Ga-N stretch absorption can be explained if the nitrogen environment is converted from NGa₄ to NInGa₃ after annealing. The N-H stretch is also changed after annealing, implying a second, and unrelated, structural change.

Original language	American English
Pages (from-to)	748-750
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	6
DOIs	https://doi.org/10.1063/1.1345819 https://doi.org/10.1063/1.1345819
State	Published - 2001

NREL Publication Number

NREL/JA-520-30063

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title = "Structural Changes During Annealing of GaInAsN",

abstract = "The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at ∼470 cm-1 (Ga-N stretch) and two or three bands at ∼3100 cm-1 (N-H stretch). The change in the Ga-N stretch absorption can be explained if the nitrogen environment is converted from NGa4 to NInGa3 after annealing. The N-H stretch is also changed after annealing, implying a second, and unrelated, structural change.",

author = "Sarah Kurtz and J. Webb and L. Gedvilas and D. Friedman and J. Geisz and J. Olson and R. King and D. Joslin and N. Karam",

year = "2001",

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pages = "748--750",

journal = "Applied Physics Letters",

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T1 - Structural Changes During Annealing of GaInAsN

AU - Kurtz, Sarah

AU - Webb, J.

AU - Gedvilas, L.

AU - Friedman, D.

AU - Geisz, J.

AU - Olson, J.

AU - King, R.

AU - Joslin, D.

AU - Karam, N.

PY - 2001

Y1 - 2001

N2 - The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at ∼470 cm-1 (Ga-N stretch) and two or three bands at ∼3100 cm-1 (N-H stretch). The change in the Ga-N stretch absorption can be explained if the nitrogen environment is converted from NGa4 to NInGa3 after annealing. The N-H stretch is also changed after annealing, implying a second, and unrelated, structural change.

AB - The alloy GaInAsN has great potential as a lower-band-gap material lattice matched to GaAs, but there is little understanding of what causes its poor optoelectronic properties and why these improve with annealing. This study provides information about the structural changes that occur when GaInAsN is annealed. The Fourier transform infrared spectra exhibit two primary features: a triplet at ∼470 cm-1 (Ga-N stretch) and two or three bands at ∼3100 cm-1 (N-H stretch). The change in the Ga-N stretch absorption can be explained if the nitrogen environment is converted from NGa4 to NInGa3 after annealing. The N-H stretch is also changed after annealing, implying a second, and unrelated, structural change.

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VL - 78

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JO - Applied Physics Letters

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Structural Changes During Annealing of GaInAsN

Abstract

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