Abstract
Using infrared, H evolution and x-ray diffraction (XRD), the structure of high H dilution, glow discharge deposited a-Si:H films 'on the edge of crystallinity' is examined. From the Si-H wag mode peak frequency and the XRD results, we postulate the existence of very small Si crystallites contained within the amorphous matrix, with the vast majority of the bonded H located on these crystallitesurfaces. Upon annealing at ramp rates of 8-15?C/min, a H evolution peak at -400?C appears, and film crystallization is observed at temperatures as low as 5OO?C,; both of which are far below those observed for a-Si:H films grown without H dilution using similar ramp rates. While the crystallite volume fraction is too small to be etected by XRD in the as-grown films, these crystallites catalyzethe crystallization of the remainder of the amorphous matrix upon moderate annealing, thus explaining the existence of the low temperature H evolution peak.
Original language | American English |
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Number of pages | 8 |
State | Published - 1999 |
Event | Materials Research Society Spring Conference - San Francisco, California Duration: 6 Apr 1999 → 10 Apr 1999 |
Conference
Conference | Materials Research Society Spring Conference |
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City | San Francisco, California |
Period | 6/04/99 → 10/04/99 |
NREL Publication Number
- NREL/CP-520-26374