Abstract
We examine the microstructure of short-period (14-31 angstrom) composition modulations in epitaxial ZnSe1-xTex (x≈0.5) films grown by molecular-beam epitaxy (MBE) on vicinal (001) GaAs. Transmission electron microscope (TEM) images of cross-sections reveal highly-periodic contrast along the growth direction throughout the full thicknesses of the films (over 2 μm) that corresponds to a nearly sinusoidal variation between Se- and Te-rich compositions. Growth of ZnSe1-xTex at 285°C on substrates tilted 4° toward [111] maximizes the strength and regularity of the modulation. Using dynamical electron-diffraction simulations, we estimate a modulation amplitude of r=0.184(7) in a sample showing strong modulation. We assume a small amplitude of strain modulation to fit the experimental data.
Original language | American English |
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Pages | 295-300 |
Number of pages | 6 |
State | Published - 1996 |
Externally published | Yes |
Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 27 Nov 1995 → 1 Dec 1995 |
Conference
Conference | Proceedings of the 1995 MRS Fall Meeting |
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City | Boston, MA, USA |
Period | 27/11/95 → 1/12/95 |
NREL Publication Number
- NREL/CP-21711