Structural Characterization of Composition-Modulated ZnSe1-xTex Epitaxial Films

S. P. Ahrenkiel, M. H. Bode, M. M. Al-Jassim, H. Luo, S. H. Xin, J. K. Furdyna

Research output: Contribution to conferencePaperpeer-review


We examine the microstructure of short-period (14-31 angstrom) composition modulations in epitaxial ZnSe1-xTex (x≈0.5) films grown by molecular-beam epitaxy (MBE) on vicinal (001) GaAs. Transmission electron microscope (TEM) images of cross-sections reveal highly-periodic contrast along the growth direction throughout the full thicknesses of the films (over 2 μm) that corresponds to a nearly sinusoidal variation between Se- and Te-rich compositions. Growth of ZnSe1-xTex at 285°C on substrates tilted 4° toward [111] maximizes the strength and regularity of the modulation. Using dynamical electron-diffraction simulations, we estimate a modulation amplitude of r=0.184(7) in a sample showing strong modulation. We assume a small amplitude of strain modulation to fit the experimental data.

Original languageAmerican English
Number of pages6
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 27 Nov 19951 Dec 1995


ConferenceProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA

NREL Publication Number

  • NREL/CP-21711


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