Structural Characterization of Composition-Modulated ZnSe1-xTex Epitaxial Films

    Research output: Contribution to conferencePaper

    Abstract

    We examine the microstructure of short-period composition modulations in epitaxial ZnSe1-xTex (x .approx. 0.5) films grown by molecular-beam epitaxy (MBE) on vicinal (001) GaAs. Transmission electron microscope (TEM) images of cross-sections reveal highly-periodic contrast along the growth direction throughout the full thicknesses of the films that corresponds to a nearly sinusoidal variationbetween Se- and Te-rich compositions. Growth of ZnSe1-xTex at 285 deg. C on substrates tilted 4 degrees toward [111] maximizes the strength and regularity of the modulation. Using dynamical electron-diffraction simulations, we estimate a modulation amplitude of r=0.184(7) in a sample showing strong modulation. We assume a small amplitude of strain modulation to fit the experimental data.
    Original languageAmerican English
    Pages295-300
    Number of pages6
    StatePublished - 1996
    EventMaterials Research Society Symposium - Boston, Massachusetts
    Duration: 28 Nov 199530 Nov 1995

    Conference

    ConferenceMaterials Research Society Symposium
    CityBoston, Massachusetts
    Period28/11/9530/11/95

    NREL Publication Number

    • NREL/CP-21711

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